Ajou University Industry-Academic Cooperation Foundation

Sung-Woon Cho

Chang-Koo Kim

The present invention provides a method for fabricating slanted copper nanorods. The method includes manufacturing a workpiece configured to include an etch stop layer on a wafer, placing the workpiece in a slanted position, and etching the slanted workpiece, forming a copper (Cu) layer on the slanted workpiece by plating, removing an over-plated portion from the copper layer, and removing a polysilicon (poly Si) excluding copper from the surface of the workpiece. According to the invention, copper nanorod structures having a uniform array can be fabricated in a large area at a high process yield compared to conventional methods. In addition, the angle and diameter of copper nanorods can be controlled as desired so that the applicability thereof can be greatly increased. Moreover, the present invention can be applied to processes for fabricating various devices, including semiconductor devices, MEMSs (microelectromechanical systems), optical devices, gas sensors, display devices, etc.

Method for manufacturing slanted copper nanorods

This invention relates to a method of fabricating a three-dimensional copper nanostructure, including manufacturing a specimen configured to include a SiOmask; performing multi-directional slanted plasma etching to form a three-dimensional etching structure layer on the specimen; performing plating so that a multi-directional slanted plasma etched portion of the specimen is filled with a metal; removing an over-plated portion and the SiOmask from the metal layer; and removing a portion of a surface of the specimen other than the metal which is the three-dimensional etching structure layer. In this invention, a uniform copper nanostructure array can be obtained by subjecting a large-area specimen disposed in a Faraday cage to multi-directional slanted plasma etching using high-density plasma, forming a copper film on the etched portion of the specimen, and removing an over-plated copper film and the SiOmask, and the diameter of the copper nanostructure can be arbitrarily adjusted, thus attaining high applicability.

Growing community of inventors

Suwon-si, South Korea

Sung-Woon Cho