Korea Institute of Science and Technology

Lg Innotek Co., Ltd.

Korea Advanced Institute of Science and Technology

Goldstar, Co., Ltd.

Ls Cable Ltd.

Lg Cable Ltd.

Institute of Science and Technology

Suzhou Lekin Semiconductor Co., Ltd.

Sung Wook Moon

Sang Wook Han

Yong Su Kim

Yong-Su Kim

Young Wook Cho

Duk Hyun Park

Byung Hak Jeong

Hyun-Joon Shin

Sang Rock Park

Yong-Hee Han

Kun Tae Kim

Eun Jung Ko

Ji Woong Choi

Sang Yun Lee

Yong Jun Kim

Min Sung Kang

Ki Yong Hong

Il Young Kim

Ho Joong Jung

Seung Woo Jeon

Dong Young Park

Abdessattar Bouzid

Min Ki Woo

Won Sang Yoo

Young Kuen Jung

Byung Kwon Park

Byungkwon Park

Se Min Kim

Jong Yeon Park

Hyang Tag Lim

Ki-Yeol Kim

Wan Yoon Lee

Hyung Suk Choi

Kwan Hee Han

Dong Hoon Yi

Yujun Choi

An inverted nanocone structure of the present disclosure includes a first surface, a second surface spaced apart from the first surface by a predetermined distance and having a greater area than the first surface, and a body having an inverted cone shape between the first surface and the second surface, wherein at least one activated point defect center is provided in the body.

Inverted nanocone structure for optical device and method of producing the same

This specification discloses a quantum public-key cryptosystem. The quantum public-key cryptosystem may use two rotation operators R(&#x3b8;) and R(&#x3c6;) satisfying a cyclic evolution. The two rotation operators R(&#x3b8;) and R(&#x3c6;) do not have a commutation relation or an anti-commutation relation with each other. The commutation relation or the anti-commutation relation is established when either of the following conditions is satisfied: &#x3b8;=2i&#x3c0;, &#x3c6;=2j&#x3c0;, or {circumflex over (n)}&#xb7;{circumflex over (m)}=1 (i, j=integer), and &#x3b8;=(2k+1)&#x3c0;, &#x3c6;=(2l+1)&#x3c0;, or {circumflex over (n)}&#xb7;{circumflex over (m)}=0 (k, l=integer).

Quantum signature method and quantum secret sharing method using quantum trapdoor one-way function

The present invention provides a random number generation system comprising: an image sensor module for outputting dark noise generated from each unit pixel region respectively that is shielded from external light as digital data; and a control unit for classifying the respective pieces of digital data output from the image sensor module, for allocating random numbers to the same using a database in which a plurality of reference values are stored for each unit pixel, and for collating the same so as to generate a first random number.

Random number generation system using image sensor, random number generation method, database construction method, and computer readable recording medium in which said method is recorded as computer program

A light emitting device of an embodiment comprises: a lower electrode; a light emitting structure disposed on the lower electrode and including a first conductive semiconductor layer, an active layer, and a second conductive semiconductor layer; an upper electrode pad disposed on the light emitting structure; at least one branch electrode connected to the upper electrode pad; and an upper ohmic layer disposed below the at least one branch electrode, wherein the upper electrode pad may include at least one connecting electrode connected to at least one branch electrode, and at least one connecting electrode may be integrally formed with the upper electrode pad and may project at certain intervals from a side surface of the upper electrode pad.

Light emitting diode and light emitting diode package

An embodiment discloses a light emitting device and a display comprising the same. The light emitting device includes: a light transmitting substrate; a light emitting structure including a second conductive semiconductor layer disposed on the light transmitting substrate, a first conductive semiconductor layer disposed on the second conductive semiconductor layer, and an active layer disposed between the second conductive semiconductor layer and the first conductive semiconductor layer; an insulating layer covering the light emitting structure; a first ohmic electrode electrically connected to the first conductive semiconductor layer; a second ohmic electrode disposed on one side of the second conductive semiconductor layer facing the light transmitting substrate and electrically connected to the second conductive semiconductor layer; a first electrode electrically connected to the first ohmic electrode through the insulating layer; and a second electrode electrically connected to the second ohmic electrode through the insulating layer and the light emitting structure, wherein the active layer emits light of a red wavelength band, the second ohmic electrode includes a pad electrode disposed at the center of the second conductive semiconductor layer and a plurality of branched electrodes extending outward from the center of the second conductive semiconductor layer.

Light emitting device and display comprising same

A red light emitting device, a fabricating method of the light emitting device, a light emitting device package and a lighting system are provided. The red light emitting device according to an embodiment may include a first conductive type first semiconductor layer; an active layeron the first conductive type first semiconductor layer; a second conductive type third semiconductor layeron the active layer; a second conductive type fourth semiconductor layeron the second conductive type third semiconductor layer; and a second conductive type fifth semiconductor layeron the second conductive type fourth semiconductor layer. The second conductive type fifth semiconductor layermay include a superlattice structure of a GaP layer/InGaP layer (0&#x2264;x&#x2264;1)

Red light emitting diode and lighting device

Disclosed is a communication apparatus including a synchronization signal detector configured to detect a synchronization signal received from other communication apparatus coupled to the communication apparatus, wherein the other communication apparatus sends a quantum signal generated by a first light source to the communication apparatus, and a second light source configured to generate a decoy signal to be added to a quantum signal that is to be sent to the other communication apparatus according to a result of the detection of the synchronization signal.

Communication apparatus and communication method for successive quantum key distribution

Disclosed is a method for stabilizing a quantum cryptography system, which includes: determining whether the quantum cryptography system operates in a stabilized state, on the basis of a bit error rate or a key rate of the quantum cryptography system; and readjusting an arrival time of a gate pulse or a laser operation time so that an arrival time of a single photon for a photon detector is aligned with the arrival time of the gate pulse, when the quantum cryptography system does not operate in a stabilized state. Here, the quantum cryptography system may be a two-way quantum cryptography system.

Apparatus and method for stablizing quantum cryptography system

An apparatus for quantum cryptographic communication includes a light source configured to generate an optical pulse which is transmitted to a plurality of quantum code sending devices, and a quantum entanglement measuring unit configured to receive the optical signal generated from each of the plurality of quantum code sending devices and measure a relation among quantum states of the optical signals received from the plurality of quantum code sending devices; the optical signal being generated by encoding a key to a quantum state of the optical pulse. The apparatus for quantum cryptographic communication may further include a signal direction determining unit, a reflector for reflecting the optical pulse or the optical signal, an arbitrary phase shifter, or a modulator for encoding a digital signal corresponding to the key to the optical pulse.

Method and apparatus for quantum cryptographic communication

The present invention relates to a single photon detector (SPD) at telecom wavelength of 1.55 &#x3bc;m based on InGaAs/InP avalanche photodiode (APD). In order to operate the SPD at a low after-pulse noise, a DC bias voltage lower than the breakdown voltage is applied to an InGaAs/InP APD. A bipolar rectangular gating signal is superimposed with the DC bias voltage and applied to the APD so as to exceed the breakdown voltage during the gate-on time of each period of the gate signal. The use of the bipolar rectangular gating signal enabling us to operate the APD well below the breakdown voltage during the gate-off time, thereby make the release of the trapped charge carriers faster and then reduces the after-pulse noise. As a result, it permits to increase the repetition rate of the SPD.

Single photon detector in the near infrared using an InGaAs/InP avalanche photodiode operated with a bipolar rectangular gating signal

A communication equipment which is utilized in a power line communication (PLC) system utilizing a hybrid fiber coax (HFC) which includes a PLC optical network unit, a PLC trunk bridge amplifier, a PLC distribution amplifier, and a PLC coupling device. In this instance, the PLC optical network unit does not require a PLC protocol conversion of an Ethernet signal by a cable modem and a PLC modem in each subscriber location, and enables a PLC communication between the each subscriber location and a communication terminal utilizing a PLC Ethernet signal as is, by receiving an optical signal from an optical transmitter via an optical fiber, converting the optical signal into the PLC Ethernet signal corresponding to a predetermined PLC protocol, and transmitting the PLC Ethernet signal to at least one subscriber location via a coaxial cable.

Power line communication system using hybrid-fiber coaxial and communication device used in the system

The present invention relates to uncooled infrared detector with infrared absorption structure in which the supporting layer, detection layer, protecting layer, and dielectric layer construct &#x3bb;/4 resonating absorbtion structure as a single body. In order to enhance the characteristic of uncooled infrared detector, it is essential for the infrared absorption layer to absorb incident infrared with high efficiency. The present invention is characterized in that the infrared detector with unified absorption layer includes an infrared detection film, a device protecting layer, a supporting layer for thermally isolated structure, and a dielectric layer, etc. in its absorption structure. Due to this characteristic, highly efficient infrared absorption is possible with much less thermal mass than the absorption layer for the structure of existing metal/dielectric/metal structure and regardless of the distortion of floating structure caused by fabrication fault rather than air cavity &#x3bb;/4 structure.

Infrared absorption layer structure and its formation method, and an uncooled infrared detector using this structure

The present invention relates to an oxide thin film for a bolometer-type uncooled infrared detector having high sensitivity. An amorphous vanadium tungsten oxide (V&#x2014;W&#x2014;O), i.e. a tungsten-doped vanadium oxide, is provided as an oxide film for a bolometer application. An oxide for bolometer having characteristics of low resistance of 5 to 200 k &#x3a9; and variable TCR between &#x2212;1.5 and &#x2212;4.1%/&#xb0; C. can be obtained by an oxidation of vanadium-tungsten metal film at a low temperature around 300&#xb0; C., with changing a tungsten content and oxidation time. And a reproducible thin film can be fabricated by low price equipment for thin film deposition, without expensive ion beam or laser apparatus. Accordingly, an oxide for bolometer having characteristics of resistance lower than 100 k&#x3a9; and TCR higher than &#x2212;3%/&#xb0; C. can be obtained with reproducibility, whereby an uncooled-type infrared detector having high sensitivity can be fabricated.

Oxide thin film for bolometer and infrared detector using the oxide thin film

Disclosed is an interleaver for an optical communication system. A dual collimator is combined with a first optical fiber acting as a light input port and one end of a second optical fiber spaced from the first optical fiber, and switches light advancing along the first and second optical fibers into parallel light. A beam splitter is arranged so that one surface is opposite to the dual collimator, and transmits one half of an input light and reflects the other half of the input light. A single collimator is arranged opposite to the other surface of the beam splitter, and combined with the other end of the second optical fiber so as to switch light advancing toward the other end of the second optical fiber into parallel light. An output optical fiber is arranged opposite to the other surface of the beam splitter and acts as a light output port.

Interleaver for optical communication system

A manufacturing method for a three dimensional conical horn antenna coupled image detector includes depositing a sacrificial layer on the upper section of the substrate, and forming a pattern for the sacrificial layer is by performing a patterning process using the first etching mask. The method further includes depositing a first silicon nitride layer, forming a first silicon nitride layer, depositing a vanadium oxide layer, forming a vanadium oxide layer pattern, depositing a conductive layer, forming a conductive layer pattern, depositing a second silicon nitride layer, forming a second silicon nitride layer pattern, depositing a third silicon nitride layer, forming a side wall space pattern, and after the sacrificial layer is removed, performing an aligning process using a seventh etching mask.

Growing community of inventors

Seoul, South Korea

Sung Wook Moon