Samsung Electro-Mechanics Co., Ltd.

Samsung Electronics Co., Ltd.

Sung Wook Kim

Seung Mo Lim

Won Jae Han

Sang Uk Son

Sang Heon Han

Jong Pil Lee

Dae Hun Jeong

Jeong Hoon Ryou

Ho Phil Jung

Tae Joon Park

Je Hong Kyoung

In Young Kang

Kyo Yeol Lee

Dong Joon Oh

Suk Kil Yoon

Young Suk Han

Jin Woo Kwak

Jong Woon Kim

Young Tae Kim

Dong Woo Lee

Sung Jun Lee

Yun Sung Kang

Jae Sang Lee

Do Soo Sung

A bulk acoustic resonator includes a first electrode disposed on an upper side of a substrate, a piezoelectric layer disposed on an upper surface of the first electrode, and a second electrode disposed on an upper surface of the piezoelectric layer, wherein an upper surface of at least one of the first electrode and the second electrode has a recess region, wherein a depth of the recess region is D, a width of the recess region is W, and a resonance frequency is F, and ln is a natural logarithm, and wherein [{ln(D*W)}/(−0.59*F)] is [[ln{0.008 (μm)}]/{−0.59*(3.5 GHz)}] or more and [[ln{0.022 (μm)}]/{−0.59*(3.5 GHz)}] or less.

Bulk acoustic resonator

A bulk-acoustic wave resonator includes: a substrate; a lower electrode disposed on the substrate; a piezoelectric layer at least partially covering the lower electrode; and an upper electrode at least partially covering the piezoelectric layer. On a surface of the bulk-acoustic wave resonator, a centroid of an active area in which the lower electrode, the piezoelectric layer, and the upper electrode all overlap each other is aligned with a center of a rectangle defining an aspect ratio of the active area. The active area has a shape of a polygon symmetrical with respect to at least one axis passing through the center of the rectangle defining the aspect ratio. The aspect ratio is greater than or equal to 2 and less than or equal to 10.

Bulk-acoustic wave resonator

A bulk-acoustic wave resonator includes: a first electrode; a piezoelectric layer at least partially disposed on an upper portion of the first electrode; and a second electrode disposed to cover at least a portion of the piezoelectric layer. The second electrode includes a frame disposed at an edge of an active region of the bulk-acoustic wave resonator, and the first electrode, the piezoelectric layer and the second electrode are disposed to overlap one another at the edge of the active region. The frame includes a wall disposed at the edge of the active region and a trench formed on an internal side of the wall. An internal boundary line of the trench has a concave-convex shape in a plane parallel to an upper surface of the frame.

A bulk-acoustic wave resonator includes: a substrate; a membrane layer forming a cavity with the substrate; a lower electrode disposed on the membrane layer; an insertion layer disposed to cover at least a portion of the lower electrode; a piezoelectric layer disposed on the lower electrode to cover the insertion layer; and an upper electrode at least partially disposed on the piezoelectric layer, wherein the upper electrode includes a reflection groove disposed on the insertion layer.

Disclosed herein are a metal plate including a plurality of pattern portions, a patterning apparatus configured to form a plurality of patterns on the metal plate, and a patterning method using the same. The metal plate to be used in a household appliance includes a plurality of pattern portions in which a hairline pattern is formed on a surface of the metal plate, wherein the plurality of pattern portions includes a first pattern portion having a first hairline pattern and a second pattern portion having a second hairline pattern different from the first hairline pattern.

Metal plate, patterning apparatus and patterning method using the same

A piezoelectric oscillator, and method of making the same, includes an oscillation substrate comprising an oscillating part and a surrounding part, wherein the surrounding part is thinner than the oscillating part, and oscillating electrodes disposed on an upper surface and a lower surface of the oscillating part. The oscillation substrate is configured according to H=400.59&#xd7;S+1.75&#xb1;1.5, wherein H=100&#xd7;(T/T) and S=T/(L&#x2212;L), wherein Lrepresents an entire length of the oscillation substrate, Lrepresents a length of the oscillating part, Trepresents a thickness of the oscillating part, and Trepresents a step height between the oscillating part and the surrounding part.

Piezoelectric oscillator and method of making the same

A crystal oscillator package includes a crystal piece configured to vibrate in response to an electrical signal, a first vibrating part protruding from an upper surface of the crystal piece, a second vibrating part protruding from a lower surface of the crystal piece, a first exciting electrode disposed on the first vibrating part, a second exciting electrode disposed on the second vibrating part, and protrusions extending from an end portion of the lower surface of the crystal piece. The protrusions include two or more stages.

Crystal oscillator package

Embodiments of the invention provide a quartz crystal vibrator including an AT-cut quartz crystal piece having a long side in an X axis direction and including first and second crystal planes formed on at least one side surface thereof in a Y' axis direction, and an electrode layer formed on the AT-cut quartz crystal piece.

AT-cut quartz crystal vibrator with a long side along the X-axis direction

Embodiments of the invention provide a quartz vibrator, including a long side in a Y' axis direction, a side in the Y&#x2032; axis direction including a first crystal face and a second crystal face formed thereon, and another side including an AT-cut quartz piece including a first crystal face and a second crystal face formed thereon and electrode layers formed on the AT-cut quartz piece.

Quartz vibrator and manufacturing method of the same

Disclosed herein is an inertial sensor. The inertial sensoraccording to preferred embodiments of the present invention includes: a membrane; a mass bodydisposed under the membrane; a piezoelectric bodyformed on the membraneto drive the mass body; and trenchesformed by being collapsed in a thickness direction of the piezoelectric bodyso as to vertically meet a direction in which the mass bodyis driven. By this configuration, the trenches are formed by being collapsed in a thickness direction of the piezoelectric bodyto provide directivity while retaining the rigidity of the piezoelectric bodyto prevent a wave from being propagated in an unnecessary direction, thereby driving the inertial sensorin a desired specific direction.

Inertial sensor

A nitride semiconductor light emitting device includes a substrate, an n-type nitride semiconductor layer formed on the substrate and provided with an electrode region of a predetermined area adjacent to a center of one lateral side of the top surface of the substrate, an n-type electrode formed on the electrode region, an activation layer, a p-type nitride semiconductor layer, and a p-type electrode which has a bonding pad adjacent to a center of another lateral side opposite to the lateral side adjacent to the electrode region to have a predetermined space from the n-type electrode and a band-shaped extension connected to the bonding pad to extend along a lateral side of the top surface of the p-type nitride semiconductor layer in opposite directions from a connected portion of the extension with the bonding pad.

Growing community of inventors

Suwon-si, South Korea

Sung Wook Kim