Samsung Display Co., Ltd.

Samsung Mobile Display Co., Ltd.

Samsung Electronics Co., Ltd.

Hyundai Autron Company Ltd.

Sejong University

Sung Wook Jung

Shi Hwa Lee

Sung Ho Kim

Jeong Seok Lee

Seok Lyul Yoon

Byoung Deog Choi

Jun Sik Kim

Dong Hoon Lee

Hee Kyun Shin

Kang Bin Yi

Jun Sin Yi

Sung Hyung Hwang

Ki Yong Lee

Joon Ho Song

Gi Ho Park

Dong Rak Ko

Eun Ji Seo

Hwan Kyeong Jeong

Sung Hun Son

Ho Ryun Chung

Yong Won Choi

Hyun Min Kim

Hahn Park

Jae Chul Hwang

A display device includes first and second substrates each including a short side and a long side, ground parts located on at least one of the short and long sides of each of the first and second substrates and including at least one first ground surfaces, which are perpendicular to opposing surfaces of the first and second substrates, and at least one second ground surfaces, which are provided at at least one edge of the second substrate to define an obtuse angle with reference to the first ground surfaces, and unevenness disposed on the first ground surfaces along a first direction, where the unevenness defines an acute angle with reference to a normal line to the opposing surfaces.

Display device and method of fabricating the same

An apparatus for calculating a filling time in an automatic transmission and a method thereof are disclosed. The apparatus includes an oil temperature detection unit for detecting an oil temperature of a transmission oil, a control duty input unit for receiving a control duty for controlling a solenoid valve that discharges or fills the transmission oil supplied from an oil pump from or to an oil flow path corresponding to a gear shifting stage to form a hydraulic pressure, a storage unit for storing a filling time table in which a relationship between a remaining flow and a filling time according to the oil temperature is mapped, and a calculation control unit for receiving the control duty of the solenoid valve from the control duty input unit to calculate the remaining flow on the basis of a variation interval of the remaining flow and an elapsed time, and calculating the filling time depending on the filling time table stored in the storage unit on the basis of the remaining flow.

Apparatus for calculating filling time of automatic transmission and control method thereof

An industrial gripper includes a base plate, at least three finger units to be moved relative to the base plate, a supporting unit to support the finger units, a first drive unit coupled to the supporting unit to allow simultaneous angular displacement of the finger units toward an object, and a second drive unit coupled to the supporting unit to adjust orientation angles between the finger units. Each of the finger units includes an intermediation member to be moved in a first direction by the first drive unit, a grip member to grip the object by being moved in a second direction different from the first direction as a movement direction of the intermediation member, and a connection member to convert the first direction movement of the intermediation member into the second direction movement of the grip member.

Industrial gripper with multiple degrees of freedom

A non-volatile memory device is capable of reducing an excessive leakage current due to a rough surface of a polysilicon and of realizing improved blocking function by forming the first oxide film including a silicon oxy-nitride (SiON) layer using nitrous oxide (NO) plasma, and by forming silicon-rich silicon nitride film, and a fabricating method thereof and a memory apparatus including the non-volatile memory device. Further, the non-volatile memory device can be fabricated on the glass substrate without using a high temperature process.

Non-volatile memory device and fabrication method thereof and memory apparatus including thereof

A non-volatile memory device includes a buffer oxide film on a substrate; a polysilicon layer on the buffer oxide film; a silicon oxy-nitride (SiON) layer on the polysilicon layer, a first insulator layer on the SiON layer, a nitride film on the first insulator, a second insulator layer on the nitride film, an electrode on the second insulator, and a source/drain in the polysilicon layer.

Non-volatile memory device and fabrication method thereof

A nonvolatile memory cell is capable of reducing an excessive current leakage due to a rough surface of a polysilicon and of performing even at a low temperature process by forming the first oxide film including a silicon oxynitride (SiOxNy) layer using nitrous oxide plasma and by forming a plurality of silicon nanocrystals in a nitride film by implanting a silicon nanocrystal on the nitride film by an ion implantation method, and a fabricating method thereof and a memory apparatus including the nonvolatile memory cell.

Nonvolatile memory cell, array thereof, fabrication methods thereof and device comprising the same

Growing community of inventors

Suwon-si, South Korea

Sung Wook Jung