Samsung Electronics Co., Ltd.

Seoul National University

Snu Rdb Foundation

Korea Research Institute of Chemical Technology

Sung Woo Myung

Seunghun Hong

Jiwoon Im

Kwang Seung Heo

Minbaek Lee

Jung Hyun Kim

Eun-hong Lee

Un-jeong Kim

Young Mook Oh

Dong Seok Lee

Seung Hun Hong

Ki-Seok An

Hyung-Woo Lee

Seung-Hun Hong

Sun Sook Lee

Jongsun Lim

Ha Kyun Jung

Wooseok Song

Yong Ho Jeon

Jin Kyu Han

Ju Wan Kang

A method of manufacturing a porous composite electrode including: preparing an ink including a carbon material and a binder; coating a substrate with the ink to manufacture a composite electrode; and irradiating the composite electrode with microwave to remove the binder and an organic material, and a method of removing an organic material of a porous composite electrode.

Manufacturing method of porous composite electrode and organic removal method of porous composite electrode

Semiconductor devices are provided. A semiconductor device includes a channel region that protrudes from a substrate. The semiconductor device includes a gate line on the channel region. Moreover, the semiconductor device includes a gate isolation layer that is between a first portion of the gate line and a second portion of the gate line. The gate isolation layer is in contact with the gate line and includes a gap that is in the gate isolation layer. Related methods of manufacturing a semiconductor device are also provided.

Semiconductor devices having a gate isolation layer and methods of manufacturing the same

A semiconductor device according to example embodiments may include a channel including a nanowire and a charge storage layer including nanoparticles. A twin gate structure including a first gate and a second gate may be formed on the charge storage layer. The semiconductor device may be a memory device or a diode.

Semiconductor device and method of manufacturing the same

A semiconductor device and methods of manufacturing and operating the semiconductor device may be disclosed. The semiconductor device may comprise different nanostructures. The semiconductor device may have a first element formed of nanowires and a second element formed of nanoparticles. The nanowires may be ambipolar carbon nanotubes (CNTs). The first element may be a channel layer. The second element may be a charge trap layer. In this regard, the semiconductor device may be a transistor or a memory device.

Semiconductor memory devices and methods of manufacturing and operating same

A reconfigurable semiconductor device is disclosed. The semiconductor device includes a substrate, a first insulating material formed on the substrate, two channels having different polarities, a plurality of terminal electrodes formed on the insulating material and coupled in common with the channels at their opposite ends, a second insulating material formed on the terminal electrodes, and a control gate formed on the second insulating material. The channels have different polarity and a charge storage layer is formed inside the second insulating material. The control gate is applied with a forward bias or a reverse bias and then the bias is cut off. The voltage-current characteristics of the semiconductor device are changed according to an electrical charge created in the charge storage layer.

Reconfigurable semiconductor device

A method for fabricating a circuit board includes providing a first substrate, forming a circuit on the first substrate, the circuit having a first electrode, a second electrode and at least one nanostructure, and transferring the circuit from the first substrate to a surface of a second substrate made of a polymer.

Method for fabricating a circuit board including aligned nanostructures

Semiconductor devices and methods of manufacturing and operating same

Growing community of inventors

Hwaseong-si, South Korea

Sung Woo Myung