Samsung Electronics Co., Ltd.

Hewlett-packard Development Company, L.p.

S-printing Solution Co., Ltd.

Sung-woo Kang

Young-Mook Oh

Seung-jun Lee

Sang-Hyun Lee

Young-hoon Han

Gil-jae You

Sea-chul Bae

Ji-su Park

Sun-hyung Lee

Hak-yoon Ahn

Seong-han Oh

In-Keun Lee

Hong-sik Shin

Jeong-Nam Han

Seung-Min Lee

Keun-Hee Bai

Sun-Jung Lee

Bok-Young Lee

Chan-Jin Park

Jeon-Il Lee

Chung-Hwan Shin

Jong-Sun Hyun

A fusing apparatus for an image forming apparatus includes a fusing belt having a sidewall that faces the fusing bel, a guide member, disposed on the sidewall and having a lower portion disposed above a lower portion of the bushing, and a ring member, disposed between the guide member and the fusing belt. The ring member can be deflected toward the sidewall in a gap which is provided below the lower portion of the guide member and between the ring member and the sidewall.

Fusing apparatus and image forming apparatus including the same

An etching method includes providing a plasma of a first treatment gas to an etching-object to form a deposition layer on the etching-object, the first treatment gas including a fluorocarbon gas and an inert gas, and the etching-object including a first region including silicon oxide and a second region including silicon nitride, providing a plasma of an inert gas to the etching-object having the deposition layer thereon to activate an etching reaction of the silicon oxide, wherein a negative direct current voltage is applied to an opposing part that is spaced apart from the etching-object so as to face an etching surface of the etching-object, the opposing part including silicon, and subsequently, providing a plasma of a second treatment gas to remove an etching reaction product, the second treatment gas including an inert gas and an oxygen-containing gas.

Etching method and methods of manufacturing semiconductor device using the same

A semiconductor device may include a substrate including a fin active region extending in a first direction, a gate structure crossing the fin active region and extending in a second direction crossing the first direction, source/drain regions on the fin active region at opposite sides of the gate structure, a first contact structure electrically connected to one of the source/drain regions, a pair of first contact block structures on opposite first sidewalls, respectively, of the first contact structure in the second direction.

Integrated circuit devices and methods of manufacturing the same

A semiconductor device includes gates extending in a first direction on a substrate, each gate of the gates including a gate insulation layer, a gate electrode, and a first spacer, first contact plugs contacting the substrate between adjacent ones of the gates, the first contact plugs being spaced apart from sidewalls of corresponding ones of the gates, a second contact plug contacting an upper surface of a corresponding gate electrode, the second contact plug being between first contact plugs, and an insulation spacer in a gap between the second contact plug and an adjacent first contact plug, the insulation spacer contacting sidewalls of the second contact plug and the adjacent first contact plug, and upper surfaces of the second contact plug and the adjacent first contact plug being substantially coplanar with each other.

Semiconductor device

A fusing apparatus for an image forming apparatus includes a rotatable fusing belt, a bushing to guide the rotation of the fusing belt, a ring member provided between the bushing and the fusing belt, and a guide member, provided on an upper portion of a sidewall of the bushing that faces the fusing belt to support an upper portion of the ring member. A gap is provided between a lower portion of the guide member and a lower portion of the sidewall to allow deflection of a lower portion of the ring member toward the sidewall.

A fusing apparatus for an image forming apparatus includes a fusing belt which rotates, a bushing guiding the fusing belt, a ring member rotatably coupled to the bushing and in contact with the fusing belt so as to rotate together with the fusing belt, and a sliding guide member, provided between the ring member and the sidewall of the bushing and at least partially disposed above a central axis of the fusing belt. The sliding guide member slidably supports the ring member and protrudes from the sidewall of the bushing such that a continuous gap is provided from a bottom of the sliding guide member to a bottom of the sidewall of the bushing.

A fusing apparatus and an image forming apparatus includes: a fusing belt; a pressing roller pressed to the fusing belt to form a nib part and rotating the fusing belt; a bushing guiding an edge of the fusing belt; and a ring member rotatably coupled to the bushing and in contact with the edge of the fusing belt that rotates to rotate together with the fusing belt, wherein a first frictional force generated between the edge of the fusing belt and the ring member is larger than a second frictional force generated between the bushing and the ring member.

A semiconductor device includes an active region in a shape of a fin extending in a first direction, the fin having source/drain regions spaced apart therein, gate structures crossing the fin between the source/drain regions, each including a gate electrode, a first contact structure in electrical contact with a first source/drain region, the first contact structure including a first lower contact and a first upper contact directly thereon, a second contact structure in electrical contact with a gate electrode of a gate structure, the second contact structure including a second lower contact and a second upper contact directly thereon, and a third contact structure in electrical contact with a gate electrode of a second gate structure and in electrical contact with a second source drain region, the third contact structure including a third lower contact and a third upper contact directly thereon.

Semiconductor device and method of manufacturing the same

A semiconductor device includes an active fin formed to extend in a first direction, a gate formed on the active fin and extending in a second direction crossing the first direction, a source/drain formed on upper portions of the active fin and disposed at one side of the gate, an interlayer insulation layer covering the gate and the source/drain, a source/drain contact passing through the interlayer insulation layer to be connected to the source/drain and including a first contact region and a second contact region positioned between the source/drain and the first contact region, and a spacer layer formed between the first contact region and the interlayer insulation layer. A width of the second contact region in the first direction is greater than the sum of a width of the first contact region in the first direction and a width of the spacer layer in the first direction.

Fin-FET semiconductor device with a source/drain contact having varying different widths

Provided is an apparatus for fabricating a semiconductor device using plasma, whereby a semiconductor device fabricating process using plasma provides significantly greater uniformity. The apparatus includes a process chamber, a first electrode through which a radio frequency (RF) power is supplied into the process chamber, a second electrode having a semiconductor substrate placed thereon, wherein the second electrode is disposed in the process chamber to face the first electrode and generates plasma used in fabricating a semiconductor device on the semiconductor substrate using the RF power, and a confinement ring assembly disposed between the first electrode and the second electrode, including a first confinement ring that moves in the vertical direction and a second confinement ring that surrounds the first confinement ring and moves in the vertical direction.

Growing community of inventors

Suwon-si, South Korea

Sung-woo Kang