Samsung Electronics Co., Ltd.

Sung-Won Yun

Chiweon Yoon

Jintae Kim

Jong-Sun Sel

Ki-Hwan Choi

Yoo-Cheol Shin

Jae-Sung Sim

Seung-Hyun Moon

Kyung-Hwa Kang

Memory devices and program methods thereof, the memory devices including a memory cell array with a three-dimensional structure, a voltage generator configured to supply a pass voltage and a program voltage to the memory cell array, and a control logic configured to make the rising slope of the pass voltage variable with a program loop during a program operation. The memory device may improve a program speed by adjusting the rising slope of the pass voltage according to the program loop.

Memory devices and program methods thereof

Operation methods of charge-trap flash memory devices having an unused memory cell for data storage and a normal memory cell used for data storage are discussed. The operation method may include selecting the unused memory cell, and programming the unused memory cell to have a predetermined threshold voltage. The charge-trap flash memory device may thus be provided with improved reliability by interrupting erasure stress to unused memory cells.

Charge-trap flash memory device with reduced erasure stress and related programming and erasing methods thereof

Growing community of inventors

Sunwon-si, South Korea

Sung-Won Yun