National Institute of Advanced Industrial Science and Technology

Riken Corporation

Toshiba Kikai Kabushiki Kaisha

Ulvac, Inc.

Marubun Corporation

Tokyo Ohka Kogyo Co., Ltd.

Sung Won Youn

Hideki Takagi

Hideki Hirayama

Takaharu Tashiro

Ryuichiro Kamimura

Yamato Osada

Takafumi Ookawa

Yukio Kashima

Eriko Matsuura

Mitsunori Kokubo

Satoshi Shimatani

Hiromi Nishihara

Hiroshi Hiroshima

Sachie Fujikawa

Kenta Suzuki

Sang Cheon Park

Provided is a method for forming a pattern of polyimide that is simpler and is more excellent in the pattern shape and in the dimensional accuracy in comparison with the conventional techniques of patterning polyimide, such as photolithography and laser processing. In a method for forming a micropattern of polyimide, which includes using as polyimide a solvent-soluble polyimide resin composition that is photosensitive and is moldable at a temperature of less than or equal to a glass-transition temperature; patterning the composition using thermal imprinting; and thermally curing the composition, ultraviolet irradiation is performed after the composition is released from a mold after a molding step.

Method for forming micropattern of polyimide using imprinting

A semiconductor light emitting element with a design wavelength of &#x3bb;, comprising a photonic crystal periodic structure having two structures with different refractive indices at each of one or more interfaces between layers that form the light emitting element. The period a and the radius R that are parameters of each of the one or more periodic structures and the design wavelength &#x3bb; satisfy Bragg conditions. The ratio (R/a) between the period a and the radius R is a value determined so that a predetermined photonic band gap (PBG) for TE light becomes maximum for each periodic structure. The parameters of each periodic structure are determined so that light extraction efficiency of the entire semiconductor light emitting element with respect to light with the wavelength &#x3bb; becomes maximum as a result of conducting a simulation analysis with a FDTD method using as variables the depth h of the periodic structure that is of greater than or equal to 0.5a and the period a and the radius R that are determined for each order m of the Bragg conditions.

Semiconductor light emitting element and method for producing the same

A semiconductor light emitting element including, in a light extraction layer thereof, a photonic crystal periodic structure including two systems (structures) with different refractive indices. An interface between the two systems (structures) satisfies Bragg scattering conditions, and the photonic crystal periodic structure has a photonic band gap.

Light emitting element and method for manufacturing same

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Ibaraki, Japan

Sung Won Youn