Samsung Electronics Co., Ltd.

Other

Sung Won Yoo

Yong Kim

Kyung Hwan Lee

Hyun Cheol Kim

Jae Ho Hong

Il Gyu Kim

Satoru Yamada

Jeongmin Park

Gwang Yeon Kim

Kyo-Suk Chae

Joon-Seok Moon

Dong Sik Kong

Hee Sun Joo

Dong Ok Ha

Hyeoung Won Seo

A method of operating a server for remote treatment is provided. The method includes transmitting, to an electronic device of a user, a treatment package corresponding to the treatment request among a plurality of treatment packages, and based on the treatment package, based on the authentication information, receiving at least one of biometric information of the user and feedback information of the user, determining whether to continue the treatment package based on at least one of the biometric information and the feedback information, transmitting, to the electronic device, a control signal for adjusting an intensity of the treatment image based on at least one of the biometric information and the feedback information according to a determination to continue the treatment package, and transmitting, to the electronic device, a control signal for discontinuing the display of the treatment image according to a determination to discontinue the treatment package.

Device and method for providing remote treatment service

A semiconductor memory device having improved electrical characteristics is provided. The semiconductor memory device comprises a first semiconductor pattern separated from a substrate in a first direction, a first gate structure extending in the first direction and penetrating the first semiconductor pattern, a first conductive connecting line connected to the first semiconductor pattern and extending in a second direction different from the first direction, and a second conductive connecting line connected to the first semiconductor pattern. The first gate structure is between the first conductive connecting line and the second conductive connecting line, the first gate structure includes a first gate electrode and a first gate insulating film, and the first gate insulating film includes a first charge holding film contacting with the first semiconductor pattern.

Semiconductor memory device

Provided is a semiconductor memory device. The semiconductor memory device comprises a first semiconductor pattern including a first impurity region, a second impurity region, and a channel region, the first impurity region spaced apart from a substrate in a first direction and having a first conductivity type, the second impurity region having a second conductivity type different from the first conductivity type, and the channel region between the first impurity region and the second impurity region, a first conductive connection line connected to the first impurity region and extending in a second direction different from the first direction and a first gate structure extending in the first direction and including a first gate electrode and a first gate insulating film, wherein the first gate electrode penetrates the channel region and the first gate insulating film is between the first gate electrode and the semiconductor pattern.

Semiconductor memory device and method for fabricating thereof

A semiconductor device includes a substrate, device isolation film defining an active region of the substrate in which a gate trench extends, a gate insulating film disposed along sides and a bottom of the gate trench, a gate electrode disposed on the gate insulating film in the gate trench and having a first portion, a second portion on the first portion, and a third portion on the second portion, a first barrier film pattern interposed between the first portion of the gate electrode and the gate insulating film, a second barrier film pattern interposed between the second portion of the gate electrode and the gate insulating film, and a third barrier film pattern interposed between the third portion of the gate electrode and the gate insulating film. The work function of the first barrier film pattern is greater than the work function of the second barrier film pattern and less than the work function of the third barrier film pattern.

Semiconductor device

According to an embodiment of the present invention, a tea infuser comprises a hollow body substantially shaped as a truncated cone. The body includes an upper part having an internal thread. A container is threaded into the body through the upper part. A lower part has an external thread. A filter is disposed in the body. The filter has a jaw along an outer circumferential surface thereof. A first cap covers the upper part. A second cap is threaded to the lower part.

Tea infuser

Growing community of inventors

Suwon-si, South Korea

Sung Won Yoo