Samsung Electronics Co., Ltd.

Korea Advanced Institute of Science and Technology

Korea Institute of Science and Technology

Seoul National University

Sungkyunkwan University

University-Industry Cooperation Group of Kyung Hee University

Sung Won Kwon

Jin Su Kim

Yu-Jin Lee

Kwang-Choon Kim

Mun Ja Kim

Hee-Jun Song

Dae Sik Jang

Byung Hwa Jung

Nam-Woo Kim

Hak Cheol Kwon

Hocheol Kim

Hyun Ok Yang

Keon Wook Kang

Jeong Hill Park

Byung Gook Kim

Myung Sook Oh

Ji Beom Yoo

Doheon Lee

Hwan Chul Jeon

Dong Wook Shin

Yong Seung Moon

Jae Hyuck Choi

The present invention relates to a pharmaceutical composition for prevention or treatment of an allergic disease comprising a mixed extract of two or more selected from the group consisting ofroot,root, andas an active ingredient; a method for prevention or treatment of an allergic disease using the pharmaceutical composition; and a health functional food and a feed composition for improvement of an allergic disease. The composition and method of the invention can specifically inhibit the differentiation of Th2 cells and thus can be effectively used as a composition for prevention or treatment of an allergic disease.

Composition for preventing or treating allergic diseases containing mixed extract of two or more amongroot,root, andas active ingredients

A method for fabricating a semiconductor device includes forming a pellicle including an amorphous carbon layer, attaching the pellicle onto a reticle, and forming a photoresist pattern by utilizing EUV light transmitted through the pellicle and reflected by the reticle. The forming the pellicle includes forming a first dielectric layer on a first side of the substrate, forming the amorphous carbon layer on the first dielectric layer, forming a second dielectric layer on a second side of the substrate opposite to the first side of the substrate, etching the second dielectric layer overlapping the first region of the substrate to form a mask pattern, and forming a support including the second region of the substrate and the remaining part of the first dielectric layer. The forming the support includes etching the first region of the substrate and the first dielectric layer on the first region.

Method for fabricating semiconductor device

Provided is a method of manufacturing a semiconductor device. The method of manufacturing a semiconductor device includes forming a target etching layer on a substrate, patterning the target etching layer to form a pattern layer including a pattern portion having a first height and a first width and a recess portion having a second width, providing a first gas and a second gas on the pattern layer, and performing a reaction process including reacting the first and second gases with a surface of the pattern portion by irradiating a laser beam on the pattern layer. The performing the reaction process includes removing a portion of sidewalls of the pattern portion so that the pattern portion has a third width that is smaller than the first width.

Method of manufacturing semiconductor device

Growing community of inventors

Suwon-si, South Korea

Sung Won Kwon