Samsung Electronics Co., Ltd.

Sung-Won Hwang

Cheol-soo Sone

Sung-hyun Sim

Jung-sub Kim

Jin-sub Lee

Geun-woo Ko

Hun-jae Chung

Jung-Sub Kim

Geun-Woo Ko

A semiconductor light-emitting device includes a contact layer. The contact layer has the composition ratio of Al elements which varies gradually therein. A region formed by an Al element in the contact layer of the semiconductor light-emitting device may improve light extraction efficiency of the light emitted from an active layer and facilitate a formation of the reflective electrode.

Semiconductor light-emitting devices including contact layers to form reflective electrodes

An ultraviolet (UV) light-emitting diode including an n-type semiconductor layer, an active layer disposed on the n-type semiconductor layer, a p-type semiconductor layer disposed on the active layer and formed of p-type AlGaN, and a p-type graphene layer disposed on the p-type semiconductor layer and formed of graphene doped with a p-type dopant. The UV light-emitting diode has improved light emission efficiency by lowering contact resistance with the p-type semiconductor layer and maximizing UV transmittance.

Light-emitting diode for emitting ultraviolet light

Growing community of inventors

Hwaseong-si, South Korea

Sung-Won Hwang