Samsung Electronics Co., Ltd.

Sung-We Cho

Ha-Young Kim

Tae-Joong Song

Dal-Hee Lee

Jin-Tae Kim

Sang-Hoon Baek

Chang-beom Kim

Hyun-jeong Roh

Seung-Young Lee

Jae-Woo Seo

Jin-Young Lim

Jae-Ha Lee

A scan flip-flop includes an input unit and a flip-flop. The input unit is configured to select one signal from among a data input signal and a scan input signal to supply the selected one signal as an internal signal according to an operation mode. The flip-flop is configured to latch the internal signal according to a clock signal. The flip-flop includes a cross coupled structure that includes first and second tri-state inverters which share a first output node and face each other.

Scan flip-flop and scan test circuit including the same

An integrated circuit includes a first conductive pattern in a first conductive layer, a second conductive pattern in a second conductive layer over the first conductive layer, and a via electrically connected with the first conductive pattern and the second conductive pattern to allow a first current flowing from the first conductive pattern to the second conductive pattern and a second current flowing from the second conductive pattern to the first conductive pattern to pass through at different times. The via is placed on the first conductive pattern so that a path of the first current does not overlap with a path of the second current in the first conductive pattern.

Integrated circuit including interconnection and method of fabricating the same, the interconnection including a pattern shaped for mitigating electromigration

An integrated circuit may include a first standard cell including first and second active regions extending in a first horizontal direction and a first gate line extending in a second horizontal direction orthogonal to the first horizontal direction; and a second standard cell including third and fourth active regions extending in the first horizontal direction and a second gate line aligned in parallel to the first gate in the second horizontal direction and being adjacent to the first standard cell. A distance between the second active region of the first standard cell and the third active region of the second standard cell may be greater than a distance between the first and second active regions of the first standard cell, and may be greater than a distance between the third and fourth active regions of the second standard cell.

Integrated circuits including standard cells and methods of manufacturing the integrated circuits

Integrated circuit including interconnection and method of fabricating the same, the interconnection including a pattern shaped and/or a via disposed for mitigating electromigration

A computer-implemented method of designing an integrated circuit (IC) includes allocating a plurality of colors to a plurality of patterns corresponding to one layer of a first cell so that a multi-patterning technology is designated for use in forming the plurality of patterns, the first cell being a multi-height cell corresponding to a plurality of rows, generating a plurality of shift cells, in which a color remapping operation associated with the plurality of patterns is performed for each row, with respect to the first cell, and storing a cell set including the first cell and the plurality of shift cells in a standard cell library.

Integrated circuit and method of designing integrated circuit

An embodiment includes an integrated circuit comprising a standard cell, the standard cell comprising: first and second active regions having different conductivity types and extending in a first direction; first, second, and third conductive lines extending over the first and second active regions in a second direction substantially perpendicular to the first direction, and disposed parallel to each other; and a cutting layer extending in the first direction between the first and second active regions and separating the first conductive line into a first upper conductive line and a first lower conductive line, the second conductive line into a second upper conductive line and a second lower conductive line, and the third conductive line into a third upper conductive line and a third lower conductive line; wherein: the first upper conductive line and the third lower conductive line are electrically connected together; and the second upper conductive line and the second lower conductive line are electrically connected together.

Integrated circuit and semiconductor device

A method of designing an integrated circuit includes a processor receiving input data initially-defining the integrated circuit using a plurality of first standard cells designed to optimize a performance or yield characteristic. The processor substitutes at least one second standard cell designed to optimize a different performance or yield characteristic from that for which the first standard cells were optimized for a corresponding one of the first standard cells. The processor generates output data defining the integrated circuit including the second standard cell. The substituted second standard cell has the same function as the corresponding first standard cell for which it was substituted.

Growing community of inventors

Hwaseong-si, South Korea

Sung-We Cho