Samsung Electronics Co., Ltd.

Lg Electronics Inc.

Samsung Fine Chemicals Co., Ltd.

Other

Lg Household & Health Care Ltd.

Korea University Research and Business Foundation

Lg Display Co., Ltd.

Sung-Tae Kim

Young-sun Kim

Seung-Hwan Lee

Han-Mei Choi

Cha-young Yoo

Ki-chul Kim

Jae-Soon Lim

Jae-Hyun Yeo

In-Sung Park

Young-Geun Park

Ki-yeon Park

Jeong-ho Nho

Jae-hyoung Choi

Young-Sun Kim

Gab-Jin Nam

Jung-hee Chung

Ki-Vin Im

Yun-Jung Lee

Jae-Hong Ko

Kyoung-Ryul Yoon

Jeong-sik Choi

Yong-Dok Cha

Young-wook Park

Cha-Young Yoo

Ki-Yeon Park

Won-yong Lee

Suk-Jin Chung

Se-Hoon Oh

Dae-Sik Choi

Keon-Il Kim

Seong-Taek Hwang

Sung-Jin Park

Seok-Jun Won

Sang Wook Park

Han-jin Lim

Jong-Cheol Lee

Ha-Jin Lim

Wan-don Kim

Se-hoon Oh

Kwang-Hee Lee

Kyung-hoon Kim

Hyeon Jeong Kim

Ju-seon Goo

Yun-Seok Kim

Jeong-hee Chung

Sungsoo Kang

Eun-kyung Baek

Jae Hong Jung

Se Woong Oh

Kyungwon Kim

Hyeung-Gyu Lee

Gi-Vin Im

Min Gyu Kim

Jae-Yeon Song

Jae-Hyun Park

Sang-Woo Lee

Byeong-Doo Choi

Sung-Ho Lee

Jung-Hyun Lee

Eric Yip

Hyun-Suk Lee

Seung-hwan Lee

Hyun-Su Kim

In-Sun Park

Hyeon-Deok Lee

Hyun-young Kim

Jin-il Lee

Hong-bae Park

Kwan-Woong Song

Sung-Jea Ko

Kwang-jin Moon

Eun-Ok Lee

Bong-hyun Kim

Wan-Don Kim

Rak-Hwan Kim

Hong-gun Kim

Jong-hoi Kim

Kyoung-Seok Kim

In-seon Park

Hong-Gun Kim

Kyoung-choul Jang

Young-Joo Cho

Nam Ki

Ho-Ki Lee

Hyun-Seok Lim

Jong-Wan Choi

Yoon-Heung Tak

Soon-yeon Park

Kee-uk Jeon

Kyung-Soo Yi

Yong-Soon Choi

Hee-seok Kim

Suk-jin Chung

Sang-hyun Sohn

Seok-chan Hong

Yong-soon Choi

Jae-Hyoung Choi

Young-Hoon Joo

Jae-Dong Byun

The present invention relates to a technology for a sensor network, machine to machine (M2M) communication, machine type communication (MTC), and the Internet of things (IoT). The present invention can be utilized for intelligent services (smart home, smart building, smart city, smart car or connected car, health care, digital education, retail, security and safety-related services, and the like) based on the technology. The present invention relates to an efficient image processing method and device for virtual reality content, and according to one embodiment of the present invention, the image processing method for projecting an image of virtual reality content comprises the steps of: acquiring a first planar image projected by dividing a front part and a rear part of a spherical image for expressing a 360-degree image; generating a second planar image projected by sampling the first planar image on the basis of a pixel position; and encoding the second planar image.

Image processing method and device for projecting image of virtual reality content

The present disclosure relates to a cosmetic vessel. The cosmetic vessel includes a discharge unit discharging cosmetics to an outside, and a discharge plate provided at one side of the discharge unit from which the cosmetics are discharged, the discharge plate including a plurality of discharge holes, wherein the cosmetics are discharged through the plurality of discharge holes of the discharge plate, and a thin film is formed on one surface of the discharge plate exposed to the outside.

Cosmetic container

Provided herein is a cosmetic vessel including a discharge unit discharging cosmetics to an outside; and a discharge plate provided at one side of the discharge unit from which the cosmetics are discharged, including at least one discharge hole, wherein the discharge plate is provided with a discharge plate processed portion made of a material different from that of the discharge plate on at least a portion of at least one surface.

An illumination apparatus is provided, including a light source unit which includes at least one laser diode emitting light of a single color; a diffuser plate which disperses the light emitted from the light source unit; a fly-eye lens array which transmits light dispersed by the diffuser plate; and a fluorescent unit on which light transmitted by the fly-eye lens array is incident and which emits white light.

Illumination apparatus and projection-type image display apparatus having the same

Provided is a polarization light emitting diode (LED) module including: a casing comprising an opening; a light source configured to emit light; a reflective polarizer configured to transmit first polarized light of the light emitted from the light source through the opening of the casing toward an external polarization converter, and configured to reflect second polarized light of the light emitted from the light source toward the light source; and a reflector configured to reflect light, which is reflected from the reflective polarizer and traveling toward the light source, toward the reflective polarizer, wherein the light source, the reflective polarizer and the reflector are provided inside the casing.

Polarization LED module, and lighting device and projector having the same

The optical system includes: a first optical group which performs a zoom function using a first movable lens, a second optical group which performs a focus function using a second movable lens, and a third optical group which performs a wide angle function by reflecting light passing through the first optical group and the second optical group, wherein a first intermediate image is formed between the first optical group and the second optical group.

Optical system and image projecting apparatus using the same

Provided is a front reflection screen for a front projection display apparatus. The front reflection screen includes a reflection layer configured to reflect an incident light including an image light projected from a projector and an external light, and a tint layer disposed before the reflection layer and including light absorbing particles to block a portion of the incident light.

Reflection type screen for front projection display apparatus

An illuminating unit and a display apparatus including the illuminating unit are provided. The illuminating unit generates and emits light to a display element of the display apparatus, and includes a light source; a uniformizing unit which uniformizes light from the light source and includes a plurality of uniformizing lenses arranged on an optical path; a condensing unit which condenses light from the uniformizing unit to emit the light to the display element and includes a plurality of condensing lenses sequentially arranged on the optical path, and the uniformizing unit and the condensing unit are arranged based on a width of one of a plurality of cell lenses forming the uniformizing lens and a width of an image displayed in the display element.

Illuminating unit and display apparatus including the same

An optical system is provided. The optical system includes a luminous system which comprises a plurality of light source devices and an image unit; and a projection system which receives light having an image through the luminous system, and enlarges and projects the light, wherein the plurality of light source devices comprise a reflection member which reflects light beam emitted from the light source devices, and are disposed so that the light beam emitted from the light source devices is reflected by the reflection member one time and enters to the image unit.

Optical system

A plasma display apparatus comprising a connector is provided. The plasma display apparatus comprises a plasma display panel comprising an electrode of a predetermined width and a connector comprising an electrode line of a width narrower than the predetermined width of the electrode to supply a driving signal to the electrode. A distance between the electrode line and an adjacent electrode line is longer than a distance between the electrode and an adjacent electrode.

Method of making a plasma display panel with a novel connection structure

One embodiment of a method of fabricating a flash memory device includes forming a trench mask pattern, which includes a gate insulation pattern and a charge storage pattern stacked in sequence, on a semiconductor substrate; etching the semiconductor substrate using the trench mask pattern as an etch mask to form trenches defining active regions; and sequentially forming lower and upper device isolation patterns in the trench. After sequentially forming an intergate insulation film and a control gate film on the upper device isolation pattern, the control gate film, the intergate insulation pattern and the gloating gate pattern are formed, thereby providing gate lines crossing over the active regions.

Flash memory device and method of fabricating the same

Plasma display apparatus comprising connector

Disclosed are methods for fabricating semiconductor devices incorporating a composite trench isolation structure comprising a first oxide pattern, a SOG pattern and a second oxide pattern wherein the oxide patterns enclose the SOG pattern. The methods include the deposition of a first oxide layer and a SOG layer to fill recessed trench regions formed in the substrate. The first oxide layer and the SOG layer are then subjected to a planarization sequence including a CMP process followed by an etchback process to form a composite structure having a substantially flat upper surface that exposes both the oxide and the SOG material. The second oxide layer is then applied and subjected to a similar CMP/etchback sequence to obtain a composite structure having an upper surface that is recessed relative to a plane defined by the surfaces of adjacent active regions.

Semiconductor device isolation structures and methods of fabricating such structures

In a method of manufacturing a dielectric structure, after a first dielectric layer is formed on a substrate by using a metal oxide doped with silicon, the substrate is placed on a susceptor of a chamber. By treating the first dielectric layer with a plasma in controlling a voltage difference between the susceptor and a ground, a second dielectric layer is formed on the first dielectric layer. The second dielectric layer including a metal oxynitride doped with silicon having enough content of nitrogen is formed on the first dielectric layer. Therefore, dielectric properties of the dielectric structure comprising the first and the second dielectric layers can be improved and a leakage current can be greatly decreased. By adapting the dielectric structure to a gate insulation layer and/or to a dielectric layer of a capacitor or of a non-volatile semiconductor memory device, capacitances and electrical properties can be improved.

Method of forming a dielectric structure having a high dielectric constant and method of manufacturing a semiconductor device having the dielectric structure

A method of manufacturing a semiconductor device includes forming a pillar-shaped active region by etching a portion of a semiconductor substrate, forming a blocking film selectively exposing a sidewall of a lower portion of the pillar-shaped active region, and forming a bit-line selectively on the exposed sidewall of the lower portion of the pillar-shaped active region.

Methods of manufacturing semiconductor devices and semiconductor devices manufactured using such a method

Growing community of inventors

Seoul, South Korea

Sung-Tae Kim