Eugene Technology Co., Ltd.

Sung-Tae Je

Il-Kwang Yang

Kyong-Hun Kim

Yang-Sik Shin

Yong-Ki Kim

Byoung-Gyu Song

Jae-Ho Lee

Dong-Keun Lee

Kyung-Jin Chu

Gil Sun Jang

Sang-Ho Choi

Seung-Hyun Yoon

Chang-Hoon Yun

Myung-In Kim

Chan-Yong Park

Disclosed are a substrate supporting unit, a substrate processing apparatus, and a method of manufacturing the substrate supporting unit. The substrate supporting unit includes a susceptor provided with heaters to heat a substrate placed on the susceptor, and including a first temperature region and a second temperature region having a higher temperature than that of the first temperature region; and a heat dissipating member including a contact surface being in thermal contact with the second temperature region. The heat dissipating member further includes an opening corresponding to the first temperature region. The heat dissipating member formed in a ring shape, in which the opening is surrounded with the contact surface, and the contact surface of the heat dissipating member makes thermal contact with the lower surface of the susceptor.

Substrate supporting unit, substrate processing apparatus, and method of manufacturing substrate supporting unit

A substrate processing method in which processes with respect to substrates are performed comprises: stacking the substrates on a substrate holder disposed in a staking space formed within a lower chamber through a passage formed in a side of the lower chamber, exhausting the stacking space through an auxiliary exhaust port connected to the stacking space, moving the substrate holder into an external reaction tube closing an opened upper side of the lower chamber to provide a process space in which the processes are performed, and supplying a reaction gas into the process space using a supply nozzle connected to the process space and exhausting the process space using an exhaust nozzle connected to the process space and an exhaust port connected to the exhaust nozzle.

Method for substrate processing using exhaust ports

Provided is an apparatus for processing a substrate. The apparatus includes a chamber providing an inner space in which a process with respect to the substrate is performed, a susceptor disposed in the inner space and on which the substrate is placed, a fixing plate disposed in an exhaust port disposed in a sidewall of the chamber along a circumference of the susceptor, the fixing plate having a plurality of through-holes, and at least one sliding plate disposed on an upper or lower portion of the fixing plate to rotate with respect to a center of the susceptor, the at least one sliding plate selectively opening and closing the through-holes.

Substrate processing device

A substrate supporting unit, a substrate processing apparatus, and a method of manufacturing the substrate supporting unit are provided. The substrate supporting unit includes a susceptor provided with heaters to heat a substrate placed on the susceptor, and including a first temperature region and a second temperature region having a higher temperature than that of the first temperature region; a heat dissipating member including a contact surface being in thermal contact with the second temperature region; and a reflecting member disposed approximately in parallel with one surface of the susceptor to reflect heat emitted from the susceptor toward the susceptor.

Provided is a substrate processing apparatus. The substrate processing apparatus includes a lower chamber having an opened upper side, an upper chamber opening or closing the upper side of the lower chamber, the upper chamber defining an inner space, in which a process is performed on a substrate, together with the lower chamber, a showerhead disposed on a lower portion of the upper chamber to supply a reaction gas toward the inner space, wherein a buffer space is defined between the showerhead and the upper chamber, a partition member disposed in the buffer space to partition the buffer space into a plurality of diffusion regions, and a plurality of gas supply ports disposed in the upper chamber to supply the reaction gas toward each of the diffusion regions.

Substrate processing apparatus and substrate processing method

Provided is a substrate processing apparatus. The substrate processing apparatus in which processes with respect to substrates are performed includes a lower chamber having an opened upper side, the lower chamber including a passage allowing the substrates to pass therethrough in a side thereof, an external reaction tube closing the opened upper side of the lower chamber to provide a process space in which the processes are performed, an internal reaction tube disposed within the external reaction tube, the internal reaction tube being disposed around a substrate holder placed in the process position to define a reaction region with respect to the substrates, a heater disposed outside the external reaction tube to heat the process space, the substrate holder on which the one or more substrates are vertically stacked, the substrate holder being movable between a stacking position in which the substrates are stacked within the substrate holder and a process position in which the processes with respect to the substrates are performed, and a heat-shield plate disposed under the substrate holder to close an opened lower side of the internal reaction tube when the substrate holder is disposed at the process position.

Substrate processing apparatus including heat-shield plate

Provided is a substrate processing apparatus. The substrate processing apparatus in which processes with respect to substrates are performed includes a lower chamber having an opened upper side, the lower chamber including a passage allowing the substrates to pass therethrough in a side thereof, an external reaction tube closing the opened upper side of the lower chamber to provide a process space in which the processes are performed, a substrate holder on which the one or more substrates are vertically stacked, the substrate holder being movable between a stacking position in which the substrates are stacked within the substrate holder and a process position in which the processes with respect to the substrates are performed, at least one supply nozzle disposed along an inner wall of the external reaction tube, the at least one supply nozzle having a supply hole for discharging a reaction gas, at least one exhaust nozzle disposed along the inner wall of the external reaction tube, the at least one exhaust nozzle having an exhaust hole for suctioning an non-reaction gas and byproducts within the process space, and a rear exhaust line connected to the exhaust nozzle to discharge the non-reaction gas and the byproducts which are suctioned through the exhaust hole. The lower chamber includes an exhaust port connecting the exhaust nozzle to the rear exhaust line and an auxiliary exhaust port connecting a stacking space defined within the lower chamber to the rear exhaust line.

Substrate processing apparatus including exhaust ports and substrate processing method

A substrate processing apparatus includes a main chamber having a process space in which a process with respect to a substrate is performed, a heater disposed in the process space to heat the substrate placed on an upper portion thereof, and a cooling ring around the heater, the cooling ring having a plurality of cooling gas passages spaced apart at a predetermined distance around the heater to allow a refrigerant supplied from the outside to selectively flow therein.

Substrate treatment apparatus, and method for controlling temperature of heater

Provided is a substrate processing apparatus. The substrate processing apparatus in which processes with respect to substrates are performed includes a lower chamber having an opened upper side, the lower chamber including a passage allowing the substrates to pass therethrough in a side thereof, an external reaction tube closing the opened upper side of the lower chamber to provide a process space in which the processes are performed, a substrate holder on which the one ore more substrates are vertically stacked, the substrate holder being movable between a stacking position in which the substrates are stacked within the substrate holder and a process position in which the processes with respect to the substrates are performed, and a gas supply unit disposed inside the external reaction tube to supply a reaction gas into the process space, the gas supply unit forming a flow of the reaction gas having different phase differences in a vertical direction.

Apparatus for processing substrate for supplying reaction gas having phase difference

Provided is a substrate processing apparatus. The substrate processing apparatus in which processes with respect to substrates are performed, the substrate processing apparatus includes a lower chamber having an opened upper side, the lower chamber including a passage allowing the substrates to pass therethrough in a side thereof, an external reaction tube closing the opened upper side of the lower chamber to provide a process space in which the processes are performed, an internal reaction tube disposed within the external reaction tube, the internal reaction tube being disposed around a substrate holder placed in the process position to define a reaction region with respect to the substrates, the substrate holder on which the one or more substrates are vertically stacked, the substrate holder being movable between a stacking position in which the substrates are stacked within the substrate holder and a process position in which the processes with respect to the substrates are performed, at least one supply nozzle disposed along an inner wall of the external reaction tube, the at least one supply nozzle having a supply hole for discharging a reaction gas, and at least one exhaust nozzle disposed along the inner wall of the external reaction tube, the at least one exhaust nozzle having an exhaust hole for suctioning an non-reaction gas and byproducts within the process space. The lower chamber includes an auxiliary gas supply port connected to the stacking space defined inside the lower chamber.

Substrate processing apparatus including auxiliary gas supply port

Disclosed is a substrate processing apparatus and method. The substrate processing apparatus includes a process chamber () providing an internal space, in which a process is carried out onto a substrate; a support member () installed in the process chamber () to support the substrate; and a shower head () located above the support member () to supply a source gas toward the support member (), wherein the shower head () includes a first injection surface () located at a position separated from the upper surface of the substrate by a first distance, and provided with outlets of first injection holes () to inject the source gas; and a second injection surface () located at a position separated from the upper surface of the substrate by a second distance being different from the first distance, and provided with outlets of second injection holes () to inject the source gas.

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Gumi-si, South Korea

Sung-Tae Je