Seoul Viosys Co., Ltd.

Seoul Semiconductor Co., Ltd.

Sung Su Son

Chang Yeon Kim

Motonobu Takeya

Seung Sik Hong

Jong Ik Lee

Ju Yong Park

Jong Hyeon Chae

So Ra Lee

Dae Woong Suh

Chung Hoon Lee

Young Hyun Kim

Jae Hee Lim

Joon Sup Lee

Joon Hee Lee

Tae Gyun Kim

Mi Hee Lee

Chang Ik Im

Ki Hyun Kim

A display device including light emitting modules having signal lines and common lines arranged thereon, each including light emitting diodes mounted on an upper surface thereof and electrically connected to the signal lines and the common lines, respectively, a motherboard coupled to the light emitting modules, and a bonding layer having electrical conductivity and coupling the light emitting modules to the motherboard, in which each of the light emitting modules includes signal line terminals and common line terminals disposed on a lower surface thereof and electrically connected to the signal lines and the multiple common lines, respectively, and the motherboard includes board signal line terminals and board common line terminals disposed on an upper surface thereof at locations corresponding to the signal line terminals and the common line terminals of the light emitting modules.

Display device and method for manufacturing the same

A light emitting apparatus including a substrate, a plurality of light emitting diode devices disposed on the substrate, a light non-transmitting layer disposed on the substrate and having at least one of open regions, and a first conductive bonding layer disposed between the plurality of lighting emitting diode devices and the substrate and electrically contacting the plurality of light emitting diode devices, in which an upper surface of the first conductive bonding layer is placed above the light non-transmitting layer.

A display device comprising a first base substrate, a second base substrate having a different area than the first base substrate, a plurality of pixels disposed on each of the first and second base substrates, and an interconnection part connected to the pixels, the interconnection part including a plurality of signal interconnections disposed on each of the first and second base substrates, in which the signal interconnections disposed on the first base substrate are connected to the signal interconnections disposed on the second base substrate through a plurality of connecting portions disposed on both of the first and second base substrates.

A display including a base, a plurality of pixels disposed on the base, at least one of the pixels including a first interconnect and a plurality of second interconnects, and a plurality of mounting portions on which a plurality of sub-pixels is to be mounted, in which a first portion of at least one the plurality of mounting portions is electrically connected to the first interconnect, a second portion of at least one of the plurality of mounting portions is electrically connected to one of the second interconnects, and at least one of the plurality of sub-pixels mounted on the plurality of mounting portions is configured to emit light of different wavelength.

Display device, substrate for display device and method for repairing display device

A display apparatus including a substrate, a first sub-pixel, a second sub-pixel, and a third sub-pixel disposed on the substrate and configured to emit red light, green light, and blue light, respectively, partition walls disposed between the first sub-pixel, the second sub-pixel, and the third sub-pixel, and configured to not transmit light, in which the first sub-pixel, the second sub-pixel, and the third sub-pixel include a first light emitting cell, a second light emitting cell, and a third light emitting cell, respectively, and a height of each of the first, second, and third light emitting cells is lower than a height of the partition walls, and a difference between the height of the partition walls and the height of each of the first, second, and third light emitting cells is less than 100 &#x3bc;m.

Light emitting device and display apparatus including the same

A display device including a light emitting diode chip, including: a light emitting structure which includes a first conductive semiconductor layer, a second conductive semiconductor layer, and an active layer interposed between the first and second conductive semiconductor layers; a second electrode which is electrically connected to the second conductive semiconductor layer; an insulation unit which is disposed to cover a part of the top surface of the second electrode and side surfaces of the light emitting structure; and a second fixed part which covers the top surface of the insulation unit and is electrically connected to the second electrode, and at least a part of which extends to the side surfaces of the light emitting structure.

Display device including a light emitting diode chip

A light emitting device including a first light emitting cell, a second light emitting cell, and a third light emitting cell each including a first conductivity type semiconductor layer, an active layer, and a second conductivity type semiconductor layer, pads electrically connected to the first, second, and third light emitting cells, a first wavelength converter configured to convert a wavelength of light emitted from the first light emitting cell into a first wavelength, and a second wavelength converter configured to convert a wavelength of light emitted from the second light emitting cell into a second wavelength longer than the first wavelength, in which the first light emitting cell has a larger area than the third light emitting cell, and the second light emitting cell has a larger area than the first light emitting cell.

A display including a base, a plurality of pixels disposed on the base in rows and columns, at least one of the pixels including a first interconnect and a plurality of second interconnects, and a plurality of mounting portions on which a plurality of sub-pixels is to be mounted, in which a first portion of each of the plurality of mounting portions is electrically connected to the first interconnect, a second portion of each of the plurality of mounting portions is electrically connected to one of the second interconnects, and at least one of the plurality of sub-pixels mounted on the plurality of mounting portions is configured to emit light of different wavelength.

A substrate for displays including a base, a plurality of first interconnects disposed on the base, a plurality of second interconnects disposed on the base to intersect with the first interconnects, and a plurality of sub-pixels disposed on the base and including one or more of the first and second interconnects, each of the sub-pixels including at least one interconnect extension protruding from at least one side of the second interconnect, first and second mounting portions formed between the at least one interconnect extension and the first interconnect, and a light emitting diode mounted on the first mounting portion, in which the second mounting portion is configured to mount another light emitting diode thereon.

A display device and a manufacturing method thereof, wherein the display device includes a light emitting diode chip, including: a light emitting structure which includes a first conductive semiconductor layer, a second conductive semiconductor layer, and an active layer interposed between the first and second conductive semiconductor layers; a second electrode which is electrically connected to the second conductive semiconductor layer; an insulation unit which is disposed to cover a part of the top surface of the second electrode and side surfaces of the light emitting structure; and a second fixed part which covers the top surface of the insulation unit and is electrically connected to the second electrode, and at least a part of which extends to the side surfaces of the light emitting structure.

Display device and manufacturing method thereof

Provided are a light emitting device and a method of fabricating the same. The light emitting device includes: a light emitting structure including a first conductivity type semiconductor layer, a second conductivity type semiconductor layer, and an active layer and including a first surface and a second surface; first and second contact electrodes each ohmic-contacting the first and second conductivity type semiconductor layers; and first and second electrodes disposed on the first surface of the light emitting structure, in which the first and second electrodes each include sintered metal particles and the first and second electrodes each include inclined sides of which the tangential gradients with respect to sides of vertical cross sections thereof are changing.

Light emitting device and method of fabricating the same

Disclosed herein is a light emitting device manufactured by separating a growth substrate in a wafer level. The light emitting device includes: a base; a light emitting structure disposed on the base; and a plurality of second contact electrodes disposed between the base and the light emitting structure, wherein the base includes at least two bulk electrodes electrically connected to the light emitting structure and an insulation support disposed between the bulk electrodes and enclosing the bulk electrodes, the insulation support and the bulk electrodes each including concave parts and convex parts engaged with each other on surfaces facing each other, and the convex parts including a section in which a width thereof is changed in a protrusion direction.

Light emitting device

A light emitting device and a method of fabricating the same. The light emitting device includes: a light emitting structure including a first conductive type semiconductor layer, a second conductive type semiconductor layer, an active layer, and a partially exposed region of an upper surface of the first conductive type semiconductor layer; a transparent electrode disposed on the second conductive type semiconductor layer; a first insulation layer including a first opening and a second opening; a metal layer at least partially covering the first insulation layer; a first electrode electrically connected to the first conductive type semiconductor layer; and a second electrode electrically connected to the transparent electrode.

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Ansan-si, South Korea

Sung Su Son