Skhynix Inc.

Yonsei University

Sungkyunkwan University

Korea Center for Disease Control and Prevention

Sung Soon Kim

Wan Sup Shin

Young Ho Yang

Min Sik Jang

Min Sung Ko

Hee Do Na

Chang Soo Lee

Hee Soo Kim

Woo Duck Jung

Dae Hee Han

Tae Kyung Kim

Myung Kyu Ahn

Jung Myoung Shim

Jee Eun Rhee

Ju Il Song

Byeong Sun Choi

Dae Ho Jang

Won Tae Hong

There is provided a method of preparing a photoelectrochemical and electrochemical electrode catalyst, the method including preparing a metal oxide-based electrode, introducing a phosphate layer on a surface of the metal oxide-based electrode; and converting the phosphate layer into an oxyhydroxide layer by performing electrochemical activation on the phosphate layer. The efficiency of selective oxidation reaction of ammonia in wastewater may be improved.

Photoelectrochemical and electrochemical metal catalyst and method of preparing the same

A semiconductor memory device, and a method of manufacturing the semiconductor memory device, includes a first source layer, a second source layer on the first source layer, a stack on the second source layer, a channel structure passing through the stack and the second source layer, and a common source line passing through the stack and the second source layer. The second source layer includes an air gap and a conductive layer surrounding the air gap.

Semiconductor memory device and method of manufacturing the same

A method of manufacturing a semiconductor device includes forming a stack in which first material layers and second material layers are alternately stacked, forming a channel structure passing through the stack, forming openings by removing the first material layers, forming an amorphous blocking layer in the openings, and performing a first heat treatment process to supply deuterium through the openings and substitute hydrogen in the channel structure with the deuterium.

Semiconductor device and method of manufacturing the same

A semiconductor device includes a stacked structure, openings passing through stacked structure, semiconductor patterns formed over inner walls of the openings, liner layers formed in the openings over the semiconductor patterns, and gap-fill insulating layers formed over the liner layers to fill the openings, wherein each of the gap-fill insulating layers seals an upper portion of the opening and includes at least one air gap.

Semiconductor device and method of fabricating the same

A semiconductor device includes stacked structure, openings passing through stacked structure, semiconductor patterns formed over inner walls of the openings, liner layers formed in the openings over the semiconductor patterns, and gap-fill insulating layers formed over the liner layers to fill the openings, wherein each of the gap-fill insulating layers seals an upper portion of the opening and includes at least one air gap.

The present disclosure relates to a semiconductor memory, device and a method of forming a semiconductor memory device. The method of manufacturing a semiconductor memory device, includes forming a tunnel insulation layer and a floating gate on a semiconductor substrate of an active region, forming a trench in the semiconductor substrate of an isolation region, forming, in the trench, a sacrificial layer having an upper surface positioned higher than a surface of the semiconductor substrate, forming a capping layer over the sacrificial layer, and forming an air gap by removing the sacrificial layer without removing the capping layer.

Semiconductor memory device and manufacturing method thereof

A semiconductor device includes a semiconductor substrate having a plurality of isolation regions, a plurality of trenches, where each of the plurality of trenches is formed in a corresponding isolation region, of the plurality of isolation regions, and where the plurality of trenches are arranged, in parallel, along a first direction, a plurality of gate lines formed on the semiconductor substrate in a second direction crossing the plurality of trenches, an insulating layer formed between each of the plurality of gate lines, a first air gap formed in at least one of the plurality of trenches, the first air gap extending in the first direction, and a second air gap formed in at least one of the insulating layers, the second air gap extending in the second direction.

Disclosed are a cell line that expresses protein of Seq. No. 1, and a method for screening an anticancer compound of uterine cervical cancer by using the same. The stable cell line that expresses oncoprotein E6 of a human papillomavirus type 16 variant strain is used to determine a difference in amounts of expression of tumor suppressor genes, such as p53, between E6 protein of the reference strain and E6 protein of a variant strain, thereby screening an anticancer compound of uterine cervical cancer, etc. Further, it is possible to develop an anticancer agent of uterine cervical cancer.

Growing community of inventors

Seoul, South Korea

Sung Soon Kim