Samsung Electronics Co., Ltd.

Sung-Soo Suh

Han-Ku Cho

Young-Seog Kang

Sang-Gyun Woo

Chang-Hwan Kim

Sung-Woo Lee

Suk-Joo Lee

In-Sung Kim

Jun-Young Jang

Young-Chang Kim

Yong-Jin Chun

Ki-Ho Yang

In a method of designing a mask, a first mask including an active region, a gate structure, and a gate tap partially overlapping the active region and the gate structure is designed. The first mask is changed so that a portion of the gate tap is extended. An OPC is performed on the changed first mask to design a second mask.

Method of designing a mask and method of manufacturing a semiconductor device using the same

Provided are a compensating mask, a multi-optical system using the compensating mask, and a method of compensating for a 3-dimensional (3-D) mask effect using the compensating mask. Methods of compensating for a 3-D mask effect using a compensating mask may include generating a first kernel corresponding to a normal mask used for forming a minute pattern, generating a second kernel corresponding to a compensating mask, mixing the first kernel corresponding to the normal mask with the second kernel corresponding to the compensating mask, and generating a multi-optical system kernel corresponding to mixing the first kernel and the second kernel.

Compensating masks, multi-optical systems using the masks, and methods of compensating for 3-D mask effect using the same

An optical proximity correction (OPC) system and methods thereof are provided. The example OPC system may include an integrated circuit (IC) layout generation unit generating an IC layout, a database unit storing a first plurality of OPC models, each of the first plurality of OPC models associated with one of a plurality of target specific characteristics and a mask layout generation unit including a model selector selecting a second plurality of OPC models based on a comparison between the target specific characteristics associated with the plurality of OPC models and the generated IC layout, the mask layout generation unit generating a mask layout based on the IC layout and the selected second plurality of OPC models. A first example method may include storing a first plurality OPC models, each of the first plurality of OPC models associated with one of a plurality of target specific characteristics, generating an IC layout, selecting a second plurality of OPC models based on a comparison between the target specific characteristics associated with the first plurality of OPC models and the generated IC layout and generating a mask layout based on the generated IC layout and the selected second plurality of OPC models. A second example method may include applying a first OPC model to a first portion of a generated integrated circuit (IC) layout, applying a second OPC model to a second portion of the generated IC layout and generating a mask layout based on the generated IC layout after the application of the first and second OPC models.

System and method correcting optical proximity effect using pattern configuration dependent OPC models

Provided is a method of fabricating a photo mask. The method includes preparing a model group including optical proximity correction (OPC) models and generating a preliminary mask layout using an integrated circuit (IC) layout. A contour image may be produced from the preliminary mask layout through a simulation using an optical model. Subsequently, the preliminary mask layout may be compared with the contour image and the comparison result may be analyzed to produce analysis data for providing criteria used in selecting an OPC model. An OPC model suitable for the preliminary mask layout may be selected from the model group based on the analysis data. An OPC process may be performed on the preliminary mask layout using the selected OPC model to generate a mask layout.

Method of fabricating photo mask

Growing community of inventors

Yongin-si, South Korea

Sung-Soo Suh