Lg Display Co., Ltd.

Sung Soo Shin

Won Sang Ryu

Youn Gyoung Chang

Sang Gul Lee

An electroluminescent display apparatus may include a first semiconductor pattern including a first channel region and a first conductive region which is a region other than the first channel region, a first gate electrode overlapping the first channel region of the first semiconductor pattern with a first gate insulation layer therebetween, a first interlayer insulation layer covering the first semiconductor pattern, and the first gate electrode, a second semiconductor pattern disposed on the first interlayer insulation layer, the second semiconductor pattern including a second channel region and a second conductive region which is a region other than the second channel region, and a second gate electrode overlapping the second channel region of the second semiconductor pattern with a second gate insulation layer therebetween. The first conductive region of the first semiconductor pattern partially overlaps the second conductive region of the second semiconductor pattern with the first interlayer insulation layer therebetween.

Electroluminescent display apparatus

Disclosed is a display device including a substrate including display and non-display areas, a first thin-film transistor located in the non-display area, and second and third thin-film transistors located in the display area. The first thin-film transistor includes a first semiconductor pattern, a first gate electrode overlapping the first semiconductor pattern, and first source and first drain electrodes connected to the first semiconductor pattern. The second thin-film transistor includes second and third semiconductor patterns including a first oxide semiconductor, a second gate electrode overlapping the second semiconductor pattern, a third gate electrode overlapping the third semiconductor pattern, and second source and second drain electrodes connected to the second and third semiconductor patterns. The third thin-film transistor includes a fourth semiconductor pattern including a first oxide semiconductor, a fourth gate electrode overlapping the fourth semiconductor pattern, and third source and third drain electrodes connected to the fourth semiconductor pattern.

Growing community of inventors

Paju-si, South Korea

Sung Soo Shin