Skhynix Inc.

Hynix Semiconductor Inc.

Sung-Soo Chi

Sung-Yub Lee

Hae-Rang Choi

Seong-Jin Kim

Young-Sik Heo

Jae-Jin Lee

Ki-Chang Kwean

Hyung-Sik Won

Woo-Young Lee

Jin-Cheol Seo

Kyeong-Pil Kang

Yeh Seul Park

Dong-Jae Lee

A memory device includes a plurality of memory cells, a weak address storage block suitable for storing a weak address of a weak cell of which data retention time is shorter than a reference time, among the plurality of memory cells, a refresh counter suitable for generating a counting address, and an address selection block suitable for outputting a refresh address by selecting one of the counting address and the weak address, wherein, in selecting the counting address, the address selection block selects the weak address for a predetermined period, when a value of at least one preset bit of the counting address is changed.

Memory device

A memory device may include: a plurality of memory cells; a weak cell information storage unit suitable for storing a weak address and parity information corresponding to one or more weak cells having a shorter data retention time than a reference time, among the plurality of memory cells; an ECC (Error Correction Code) circuit suitable for detecting and correcting an error bit of the one or more weak cells using the parity information; and a refresh control unit suitable for controlling the plurality of memory cells to be refreshed at a cycle equal to or more than the reference time.

Memory device correcting data error of weak cell

A test device includes: a test control unit suitable for detecting a deterioration-expected unit circuit among a plurality of unit circuits included in a test-subject device according to operation histories of the plural unit circuits, and detecting a deterioration degree according to a test output value of the deterioration-expected unit circuit; and an interface unit suitable for routing control operation results and test results between the test control unit and the test-subject device during a test operation.

Test device

A semiconductor memory device including a weak cell storage circuit suitable for programming therein weak cell information, and outputting the weak cell information in an initialization operation; a cell array region including a first cell region which stores the weak cell information received from the weak cell storage circuit, in the initialization operation; a refresh address generation block suitable for generating a refresh address by counting a refresh signal, and outputting a weak cell address corresponding to the weak cell information outputted from the first cell region, as the refresh address, with a predetermined cycle; and a refresh circuit suitable for performing a refresh operation for a word line corresponding to the refresh address, among a plurality of word lines.

Semiconductor memory device performing refresh operation based on weak cell information stored in memory array region and operating method thereof

An electronic device includes a power-up signal generation circuit block suitable for generating a power-up signal during a power-up section of a source voltage, a delay circuit block suitable for generating a plurality of delay signals by sequentially delaying the power-up signal, and a plurality of internal circuit blocks sequentially initialized in response to a corresponding one of the power-up signal and the delay signals.

Electronic device and system that initializes logic circuits at different times by sequentially delaying a power up signal to a plurality of internal circuit blocks

An integrated circuit includes: a latch unit suitable for inverting a voltage level of a first node and driving a second node with the inverted voltage level of the first node, and inverting a voltage level of the second node and driving the first node with the inverted voltage level of the second node; and a sink unit coupled with one or more among the first and second nodes, and suitable for sinking a charge of the coupled node.

Integrated circuit

A semiconductor memory device includes a memory bank including a plurality of word lines, and a refresh operation control unit suitable for performing a first refresh operation for a first adjacent word line group of a target word line of the plurality of word lines, and performing a second refresh operation for a second adjacent word line group of the target word line after the first refresh operation, in response to a smart refresh command.

Semiconductor memory device and refresh control method thereof

A semiconductor device includes a first pre-stress block suitable for generating a first load signal, which corresponds to an active signal during an active mode and/or to a high voltage level during a precharge mode, in response to a stress section signal; a first delay amount reflection block suitable for reflecting a first delay amount in the first load signal in response to one or more first delay amount control signals; and a first main stress block suitable for generating a word line driving control signal, which corresponds to the active signal during the active mode and the high voltage level during the precharge mode, in response to the stress section signal and the first load signal.

Semiconductor device

A semiconductor memory device includes: a word line driving unit suitable for performing activation operations for a plurality of normal word lines and a plurality of redundancy word lines in response to test addresses; and a test control unit suitable for controlling a number of activations of each of the plural normal and redundancy word lines to be equal based on repair information corresponding to a repair target word line among the plural normal word lines during a test operation.

Semiconductor memory device and test operation method thereof

Disclosed is a semiconductor memory device including: a sense amplifier capable of sensing and amplifying data loaded on a data-line pair based on a pull-up driving voltage and a pull-down driving voltage; a pull-up driving unit capable of supplying a first voltage as the pull-up driving voltage for first and third active sections of an active mode, and supplying a second voltage having a voltage level lower than the first voltage as the pull-up driving voltage for a second active section of the active mode, between the first and third active sections of the active mode; and a pull-down driving unit capable of supplying a third voltage as the pull-down driving voltage for the first to third active sections of the active mode and for an initial section of a precharge mode after the active mode.

Semiconductor memory device

A semiconductor device includes a plurality of memory cell region regions with each memory cell region region having a plurality of normal memory cell regions, a dummy memory cell region disposed at one side of the plurality of normal memory cell regions, and another dummy memory cell region disposed at another side of the plurality of normal memory cell regions. The semiconductor device further includes a plurality of circuit regions, each including a control circuit to control a portion of the plurality of normal memory cell regions, the dummy memory cell region, and the other dummy memory cell region. The plurality of memory cell region regions and the plurality of control regions are symmetrically disposed about a peripheral region of the semiconductor device.

Semiconductor device having dummy cell region that are symmetrically disposed about peripheral region

A latch circuit includes: first to Nth storage nodes where N is an even number equal to or more than four; and first to Nth pairs of transistors, each of which comprises a PMOS transistor and an NMOS transistor coupled in series with each other through a corresponding node among the first to Nth storage nodes. The PMOS transistor is coupled to one of the storage nodes included in previous one of the pairs of transistors at a gate of the PMOS transistor. The NMOS transistor is coupled to one of the storage nodes included in next one of the pairs of transistors at a gate of the NMOS transistor. The PMOS transistors of the first to Nth pairs of transistors are formed in a first active region. The NMOS transistors of the first to Nth pairs of transistors are formed in a second active region, separated from the first active region.

Latch circuit and semiconductor device including the same

A semiconductor device includes a first block coupled between a first latch node and a second latch node, a second block suitable for generating common-mode noise between the first latch node and the second latch node, wherein the second block includes a first MOS transistor having a gate coupled with the first latch node, and one between a source and a drain of the first MOS transistor is coupled with the second latch node while the other between the source and the drain is floating.

A semiconductor memory device may include a control signal generation unit suitable for generating a block selection signal in response to first and second precharge signals during a test operation; a word line control unit suitable for generating a word line deactivation signal in response to the first precharge signal and the block selection signal; and a bit line equalization control unit suitable for generating a bit line level equalization signal in response to the second precharge signal and the block selection signal.

Semiconductor memory device, semiconductor system and test method thereof

An integrated circuit includes a latch block suitable for storing a signal through four or more even-numbered coupling lines inverted and driven alternately with each other, wherein the coupling lines are divided into two or more coupling line groups each including coupling lines inverted and driven to the same logic level, and a charge buffer block coupled between two or more coupling lines included in one of the coupling line groups and suitable for slowing down a charge movement speed therebetween.

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Gyeonggi-do, South Korea

Sung-Soo Chi