Samsung Electronics Co., Ltd.

Sung-Ryoul Bae

Dong-Eun Jang

Eung-Kyu Lee

Hoon Suk Chang

Yong-Don Kim

Jae-June Jang

Min-hwan Kim

Soo-Bang Kim

A semiconductor device includes a semiconductor substrate of a first conductivity type, a buried layer a second conductivity type different from the first conductivity type on the substrate and an epitaxial layer of the second conductivity type on the buried layer. The device further includes a pocket well of the first conductivity type in the epitaxial layer, a first drift region in the epitaxial layer at least partially overlapping the pocket well, a second drift region in the epitaxial layer and spaced apart from the first drift region, and a body region of the first conductivity type in the pocket well. A gate electrode is disposed on the body region, the pocket well and the first drift region and has an edge overlying the epitaxial region between the first and second drift regions.

Metal oxide semiconductor devices with multiple drift regions

Provided are a method of fabricating a semiconductor integrated circuit device and a semiconductor integrated circuit device fabricated using the method. The method includes: forming a mask film, which exposes a portion of a substrate, on the substrate; forming a first buried impurity layer, which contains impurities of a first conductivity type and of a first concentration, in a surface of the exposed portion of the substrate by using the mask film; removing the mask film; forming a second buried impurity layer, which contains impurities of a second conductivity type and of a second concentration, using blank implantation; and forming an epitaxial layer on the substrate having the first and second buried impurity layers, wherein the first concentration is higher than the second concentration.

Method of fabricating semiconductor integrated circuit device and semiconductor integrated circuit device fabricated using the method

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Hwaseong-si, South Korea

Sung-Ryoul Bae