Samsung Electronics Co., Ltd.

Sung-ryoul Bae

Dong-Kyun Nam

Kye-won Maeng

Ho-Sung Son

Tae-Jin Kim

Dong-kyun Nam

Kye-wong Maeng

A method of fabricating a photo diode includes sequentially forming a buried layer of a first conductivity type, a first epitaxial layer of the first conductivity type, and a second epitaxial layer of a second conductivity type on a semiconductor substrate; forming a doped oxide film, including impurities of the second conductivity type, on the second epitaxial layer; forming a silicon nitride film on the oxide film; and patterning the oxide film and the silicon nitride film to sequentially form an oxide film pattern of the second conductivity type and a silicon nitride film pattern, respectively. The second conductivity type impurities are diffused from the oxide film pattern into the second epitaxial layer using a heat diffusion process to form a doped shallow junction layer of the second conductivity type, which converts the oxide film pattern into a non-conductive oxide film pattern.

Photo diode and method for manufacturing the same

A photo diode includes a buried layer of first conductivity type, an epitaxial layer of first conductivity type and an epitaxial layer second conductivity type which are sequentially formed on a semiconductor substrate, a doped shallow junction layer of second conductivity type which is formed using a solid state diffusion process from a surface region to an internal region of the epitaxial layer of second conductivity type, and a silicon oxide film pattern and a silicon nitride film pattern which are sequentially formed on the shallow junction layer.

Photo diode and method for manufacturing same

A photodiode and a method of manufacturing the photodiode are provided. The method includes forming a diode junction structure including a light receiving unit and an electrode unit on a semiconductor substrate, forming a buffer oxide layer and an etching blocking layer on the junction structure, forming an interlayer insulating layer and an intermetal insulating layer and an interconnecting structure, exposing the etching blocking layer by etching the intermetal insulating layer and the interlayer insulating layer, removing a portion of the etching blocking layer and the buffer oxide layer of the light-receiving unit by dry etching, and exposing a semiconductor surface of the light-receiving unit by wet etching.

Photodiode and method of manufacturing the same

There is provided a bipolar transistor (with a respective fabrication method) that provides superior noise characteristics and gain diffusion. The fabricating method includes forming a first base region at a collector region, which in turn is formed on a substrate. A first silicon layer is formed on the base region, and a second silicon layer is formed on the first silicon layer using a forming method different from the method used in forming the first silicon layer. An emitter region is then formed from impurities at the base region by performing a thermal process.

Bipolar transistor and fabricating method thereof

Methods of manufacturing a photo diode include sequentially forming a buried layer of a first conductivity type, a first epitaxial layer of the first conductivity type, and a second epitaxial layer of a second conductivity type on a substrate. The second and first epitaxial layers are etched to form a trench that exposes a portion of the buried layer. A conductive plug of the first conductivity type is formed in the trench. A first electrode is formed on an upper surface of the second epitaxial layer. A second electrode may be formed to contact an upper surface of the conductive plug. Photodiodes having a conductive plug contact to a buried layer are also provided.

Method of manufacturing photo diodes having a conductive plug contact to a buried layer

Photodiodes and methods of fabricating photodiodes are provided. For example, a method of fabricating a photodiode includes forming a buried layer of a first conductive type on a semiconductor substrate and forming a first intrinsic capping epitaxial layer on the buried layer. A first intrinsic epitaxial layer of the first conductive type is formed on the first intrinsic capping epitaxial layer. A first junction region of the first conductive type is formed in the first intrinsic epitaxial layer. A second intrinsic epitaxial layer of the second conductive type is formed on the first junction region and the first intrinsic epitaxial layer. A second intrinsic capping epitaxial layer is formed on the second intrinsic epitaxial layer. A second junction region of the first conductive type is formed such that the second junction region passes through the second intrinsic capping epitaxial layer and the second intrinsic epitaxial layer. The second junction region contacts the first junction region. A first electrode is formed on a surface of the second junction region and a second electrode is formed on a surface of the second intrinsic capping epitaxial layer.

Photodiode and method of fabricating the same

A method of fabricating a complementary bipolar junction transistor includes forming a polycrystalline silicon layer on an NPN bipolar junction transistor region and a PNP bipolar junction transistor region, respectively implanting an N-type impurity and a P-type impurity into the polycrystalline silicon layer, and then diffusing to respectively form an N-type emitter region and a P-type emitter region within a P-type base region and an N-type base region. By patterning the polycrystalline silicon layer, an N-type emitter electrode and a P-type emitter electrode are simultaneously formed. The polycrystalline silicon layer is used for simultaneously forming the N-type emitter electrode of the NPN bipolar junction transistor and the P-type emitter electrode of the PNP bipolar junction transistor by a single depositing and etching process.

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Suwon-si, South Korea

Sung-ryoul Bae