Hyundai Motor Company

Kia Motors Corporation

Yonsei University

Dongbu Electronics, Co. Ltd.

Industry-university Cooperation Foundation Sogang University

Sung Rae Kim

In Ju Lee

Hyung Joo Kim

Han Sung Kim

Sang Yoon Han

Dae Won Lee

Seong Guk Kim

Do Young Jeon

Dong Soo Shin

Kook Jin Jang

Young Keun Cho

Young Kuen Cho

Yo Han Hahm

A vehicle and a method of controlling the vehicle include a display unit, an adjuster configured to move the display unit within a preset angle range, and a controller configured to move the display unit to correspond to a change in a proceeding direction of the vehicle during autonomous driving of the vehicle to a preset destination. When an autonomous vehicle changes a vehicle proceeding direction during driving, a display unit or a seat inside the vehicle is turned and moved in the same direction as the changed vehicle proceeding direction to lower a physical angular speed that affects human carsickness, thereby reducing carsickness.

Vehicle and a method of controlling same

A seat for a vehicle may include a unit foam that is formed so as to have a magnetic property due to a magneto-rheological fluid, and magnetic bodies that are provided on both sides of the unit foam, respectively, to form a magnetic field passing through the unit foam.

Seat for vehicle

Disclosed is an apparatus for measuring a shearing force upon sitting in a seat in a vehicle. The apparatus includes a shearing force sensor, a signal processor, and a monitoring device. The shearing force sensor is disposed in a compartment in a seat and senses the shearing force generated upon sitting on the seat. The signal processor filters and amplifies a signal from the shearing force sensor, and converts an amplified analog signal into a digital signal. The monitoring device analyzes the signal converted by the signal processor and displays the signal. As a result, the apparatus measures all directions of shearing forces generated upon sitting.

Apparatus for measuring shearing force upon sitting

A method for fabricating an STI gap fill oxide layer in a semiconductor device is provided. The method can include: forming a shallow trench for forming an STI on a semiconductor substrate; forming an STI liner oxide layer in the shallow trench for the STI; depositing an APCVD oxide layer at an upper portion of the STI liner oxide layer for an oxide layer gap fill in the shallow trench of the STI; d) performing a densifying annealing process to densify the APCVD oxide layer; and depositing an HDP-CVD oxide layer at an upper portion of the APCVD oxide layer so that the STI shallow trench is completely gap-filled.

Method for fabricating STI gap fill oxide layer in semiconductor devices

Growing community of inventors

Seoul, South Korea

Sung Rae Kim