Samsung Electronics Co., Ltd.

Sung-nam Chang

Dong-Joo Bae

Yun-seung Shin

A high-density semiconductor memory device has a self-aligning contact structure for electrical connection between lower and upper conductive layers, and an inter-insulating layer with a via for forming the contact structure. The contact structure has a contact pad including a first conductive layer electrically connected with the lower conductive layer within the via and formed on a predetermined portion of the inter-insulating layer around the groove, a planarizing material filling up the groove formed on the first conductive layer, and second conductive layers formed on the planarizing material and exposed first conductive layer.

Semiconductor device with a multilayered contact structure having a

An interconnection structure of a semiconductor device for electrically connecting a thin conductive layer and a metallization and the fabrication method thereof are disclosed. The interconnection structure includes a semiconductor substrate, an insulating layer coated on the substrate, a thick conductive layer formed on a certain portion of the insulating layer, a first interlaid insulating layer covering the thick conductive layer, a first contact hole formed within the first interlaid insulating layer on the thick conductive layer, a thin conductive layer consisting of vertical structure formed in the first contact hole and horizontal structure formed on the first interlaid insulating layer, a second interlaid insulating layer covering the thin conductive layer, a second contact hole formed within said first and second interlaid insulating layers and crossing the first contact hole, and a metallization filling the second contact hole and formed on the second interlaid insulating layer. Thus, the contact area between the metallization and thin conductive layer is increased, thereby allowing a reliable ohmic contact while directly connecting the thin conductive layer and metallization.

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Kyunggi, South Korea

Sung-nam Chang