Skhynix Inc.

Hynix Semiconductor Inc.

Sung Mook Kim

Tae Yong Lee

Jong Seok Kim

Byong Deok Choi

Dong Seok Kim

In Seok Kong

Keun Jin Chang

Joo Won Oh

Se Won Kim

Ki Yong Choi

A data transmission circuit may include a plurality of data transmission lines configured to transmit a victim data signal through a victim data transmission line, and transmit an adjacent data signal through an adjacent data transmission line disposed adjacent to the victim data transmission line; and a data input/output circuit configured to control a reference voltage level reflected into the victim data signal on the basis of data pattern information of the adjacent data signal, and compare the victim data signal to the reference voltage level and output the comparison result.

Data transmission circuit and operation method thereof

A monitoring circuit according to an embodiment of the present disclosure includes a booster configured to amplify a current amount between a terminal to which a power voltage is applied and a ground terminal to generate a sensing voltage, and an oscillator configured to output a sensing signal of which a frequency is adjusted in response to the sensing voltage, wherein the booster includes a transistor having a first size and a transistor having a second size greater than the first size, and wherein the oscillator includes a plurality of transistors having a third size greater than the first size.

Monitoring circuit monitoring performance of transistors

A digital counter includes: a plurality of flip-flops configured to generate a plurality of count signals; and a controller configured to prevent level transition of an input terminal of a flip-flop to generate a count signal corresponding to a least significant bit (LSB), in response to a clock signal and a count end signal.

Digital counter

A semiconductor device with OTP memory cell includes a first switching unit for transferring a first bias voltage, a first MOS transistor having a first gate coupled to a first gate signal and a first terminal coupled to the first bias voltage by the first switching unit, and a second switching unit for coupling a second terminal of the first MOS transistor to a first bit line.

Semiconductor device with OTP memory cell

Disclosed is a flash analog to digital converter (ADC) capable of reducing area requirements and using successive approximation. The ADC includes a reference voltage generating unit receiving an external voltage and outputting M reference voltages. A reference voltage selecting unit outputs N reference voltages less than the number of the voltages outputted by the reference voltage generating unit according to a supplied control signal. A digital signal output unit compares the N reference voltages outputted by the reference voltage selecting unit with an external analog input signal and outputs the comparison result as an N-bit digital signal.

Growing community of inventors

Gyeonggi-do, South Korea

Sung Mook Kim