Electronics and Telecommunications Research Institute

University-Industry Cooperation Group of Kyung Hee University

Cungbuk Nat'l Univ. Industry Academic Cooperation Foundation

Sung-Min Yoon

Chi-Sun Hwang

Seung Youl Kang

Kyoung Ik Cho

Young Sam Park

Jong-Heon Yang

Chunwon Byun

Nam Yeal Lee

Seung-Yun Lee

Seungeon Moon

Byoung-Gon Yu

Jong Pil Im

Byung-Do Yang

Jeong Hun Kim

Bae Ho Park

Chansoo Yoon

Jiyong Woo

Ji Hoon Jeon

The present disclosure relates to a memory device, and more particularly, to a memory device including a substrate, a plurality of vertical structures disposed on the substrate and including insulation layers and lower electrodes, which are alternately laminated with each other, wherein the vertical structures are aligned in a first direction parallel to a top surface of the substrate and a second direction crossing the first direction, an upper electrode disposed on a top surface and side surfaces of each of the vertical structures, and a first dielectric layer disposed between the upper electrode and the vertical structures to cover the top surface and the side surfaces of each of the vertical structures. Here, the first dielectric layer includes a ferroelectric material.

Memory device and method of manufacturing the same

Provided is a gate driving circuit. The gate driving circuit includes an ith modulation circuit and an ith line selection circuit (where i is a natural number greater than 1). The ith modulation circuit outputs an ith modulation voltage to an ith line selection circuit based on received first to third control signals. The ith line selection circuit includes a memory transistor that is turned on or turned off according to a level of the received ith modulation voltage.

Gate driving circuit and organic light emitting display device including the same

Provided are an apparatus and method for writing data to a phase-change random access memory (PRAM) by using writing power calculation and data inversion functions, and more particularly, an apparatus and method for writing data which can minimize power consumption by calculating the power consumed while input original data or inverted data is written to a PRAM and storing the data consuming less power. A PRAM consumes a significant amount of power in order to store data in a memory cell since a large electric current is required to flow for a long period of time. According to the present invention, since the PRAM consumes different amounts of power when writing data with a value of 0 and data with a value of 1, the power consumed when input original data is stored and the power consumed when the input original data is inverted and stored are compared to each other, the data with a smaller power consumption is stored when the data is written to the PRAM as a word unit, and thus the power consumption of the PRAM can be reduced.

Apparatus and method for writing data to phase-change memory by using power calculation and data inversion

Growing community of inventors

Suwon-si, South Korea

Sung-Min Yoon