Electronics and Telecommunications Research Institute

Konkuk University Industrial Cooperation Corp

Other

Sung Min Yoon

Byoung Gon Yu

Young Sam Park

Seung Yun Lee

Soon Won Jung

Seung Youl Kang

Gi Heon Kim

Chi Sun Hwang

Kyung Soo Suh

In Kyu You

Kyu Ha Baek

Nam Yeal Lee

Sang Hee Park

Seung-Yun Lee

Sangouk Ryu

Chun Won Byun

Shin Hyuk Yang

Byoung-Gon Yu

Kyu Jeong Choi

Kyu-Jeong Choi

Nam-Yeal Lee

Kyoung Ik Cho

Ji Sun Kim

Seong Deok Ahn

Kee Chan Park

Him Chan Oh

Byeong Hoon Kim

Jae Eun Pi

Tao Ren

Min Woo Oh

Doo Hee Cho

Sang Ouk Ryu

Hong Kyun Leem

Soonwon Jung

Joon Suk Lee

Tae Jin Park

Chi-Sun Hwang

Sang Hoon Cheon

Kwi Dong Kim

Chunwon Byun

Min Ki Ryu

Seong Mok Cho

Sang-Hee Park

Woong Chul Shin

Yong-Joo Kim

Jun Young Baek

Chi Beom Noh

Hong Kyung Leem

Se Young Choi

ByeongHoon Kim

Shinhyuk Yang

The present invention relates to an exercise assistance device for assisting muscle exercise by means of a motor driven by means of electronic control. An electric exercise assistance device, according to the present invention, comprises: sensors comprising a first sensor and a second sensor; a motor driven by means of a control signal and generating an external force; a Micom for correcting the frictional driving force inside an exercise assistance device and deriving a calculation value of exercise assistance point, exercise assistance intensity and exercise assistance location on the basis of an encoder signal, the exercise speed and the number of exercise sets detected by means of the first sensor, exercise intensity, and user information; a mount detachably attached to a vertical frame of a rack used for muscle exercise; a base rail for guiding the movement of a safety bar; a power transmission unit for transmitting the power of the motor to the safety bar; the safety bar for enabling application of an external force, which is required for exercise assistance and exercise, and enabling detachment and attachment of a barbell rod for muscle exercise; and a rest for resting a weight material, used for muscle exercise, at an exercise starting location.

Electric exercise assistance device

Disclosed are an inverter, a NAND gate, and a NOR gate. The inverter includes: a pull-up unit constituted by a second thin film transistor outputting a first power voltage to an output terminal according to a voltage applied to a gate; a pull-down unit constituted by a fifth thin film transistor outputting a ground voltage to the output terminal according to an input signal applied to a gate; and a pull-up driver applying a second power voltage or the ground voltage to the gate of the second thin film transistor according to the input signal.

Inverter, NAND gate, and NOR gate

Provided are a phase-change memory device using a phase-change material having a low melting point and a high crystallization speed, and a method of fabricating the same. The phase-change memory device includes an antimony (Sb)-selenium (Se) chalcogenide SbSephase-change material layer contacting a heat-generating electrode layer exposed through a pore and filling the pore. Due to the use of SbSein the phase-change material layer, a higher-speed, lower-power consumption phase-change memory device than a GST memory device can be manufactured.

Phase-change memory device using Sb-Se metal alloy and method of fabricating the same

Provided is a non-volatile programmable device including a first terminal, a first threshold switching layer connected to part of the first terminal, a phase change layer connected to the first threshold switching layer, a second threshold switching layer connected to the phase change layer, a second terminal connected to the second threshold switching layer, and third and fourth terminals respectively connected to a side portion of the phase change layer and the other side portion opposite to the side portion of the phase change layer.

Non-volatile programmable device including phase change layer and fabricating method thereof

Provided are a Phase-change Random Access Memory (PRAM) device and a method of manufacturing the same. In particular, a PRAM device including a heating layer, wherein the heating layer comprises first and second heating layers having different physical properties from each other and a method of manufacturing the same are provided. Since the PRAM device according to the present invention includes a heating layer having optimal heating characteristics, a PRAM device having high reliability and excellent operating characteristics can be manufactured.

Phase-change random access memory device and method of manufacturing the same

Provided are a nonvolatile memory cell and a method of manufacturing the same. The nonvolatile memory cell includes a memory transistor and a driver transistor. The memory transistor includes a semiconductor layer, a buffer layer, an organic ferroelectric layer, and a gate electrode, which are disposed on a substrate. The driver transistor includes the semiconductor layer, the buffer layer, a gate insulating layer, and the gate electrode, which are disposed on the substrate. The memory transistor and the driver transistor are disposed on the same substrate. The nonvolatile memory cell is transparent in a visible light region.

Nonvolatile memory cell and method of manufacturing the same

Provided is a memory cell including: a ferroelectric transistor; a plurality of switching elements electrically connected to the ferroelectric transistor; and a plurality of control lines for transmitting individual control signals to each of the plurality of switching element for separately controlling the plurality of switching elements. The plurality of switching elements are configured to be separately controlled on the basis of the individual control signals so as to prevent each electrode of the ferroelectric transistor from being floated.

Memory cell and memory device using the same

Provided are a transparent nonvolatile memory thin film transistor (TFT) and a method of manufacturing the same. The memory TFT includes source and drain electrodes disposed on a transparent substrate. A transparent semiconductor thin layer is disposed on the source and drain electrodes and the transparent substrate interposed between the source and drain electrodes. An organic ferroelectric thin layer is disposed on the transparent semiconductor thin layer. A gate electrode is disposed on the organic ferroelectric thin layer in alignment with the transparent semiconductor thin layer. Thus, the transparent nonvolatile memory TFT employs the organic ferroelectric thin layer, the oxide semiconductor thin layer, and auxiliary insulating layers disposed above and below the organic ferroelectric thin layer, thereby enabling low-cost manufacture of a transparent nonvolatile memory device capable of a low-temperature process.

Transparent nonvolatile memory thin film transistor and method of manufacturing the same

Provided are a nonvolatile memory device and a method of fabricating the same, in which a phase-change layer is formed using a solid-state reaction to reduce a programmable volume, thereby lessening power consumption. The device includes a first reactant layer, a second reactant layer formed on the first reactant layer, and a phase-change layer formed between the first and second reactant layers due to a solid-state reaction between a material forming the first reactant layer and a material forming the second reactant layer. The phase-change memory device consumes low power and operates at high speed.

Method for fabricating phase change memory device using solid state reaction

A nonvolatile programmable switch device using a phase-change memory device and a method of manufacturing the same are provided. The switch device includes a substrate, a first metal electrode layer disposed on the substrate and including a plurality of terminals, a phase-change material layer disposed on the substrate and having a self-heating channel structure, the phase-change material layer having a plurality of introduction regions electrically contacting the terminals of the first metal electrode layer and a channel region interposed between the introduction regions, an insulating layer disposed on the first metal electrode layer and the phase-change material layer, a via hole disposed on the first metal electrode layer, and a second metal electrode layer disposed to fill the via hole. The switch device performs memory operations using resistive heating of a phase-change material without an additional heater electrode, thereby minimizing thermal loss due to thermal conductivity of a metal electrode to reduce power consumption of the switch device.

Nonvolatile programmable switch device using phase-change memory device and method of manufacturing the same

An embedded memory required for a high performance, multifunction SOC, and a method of fabricating the same are provided. The memory includes a bipolar transistor, a phase-change memory device and a MOS transistor, adjacent and electrically connected, on a substrate. The bipolar transistor includes a base composed of SiGe disposed on a collector. The phase-change memory device has a phase-change material layer which is changed from an amorphous state to a crystalline state by a current, and a heating layer composed of SiGe that contacts the lower surface of the phase-change material layer.

Embedded phase-change memory and method of fabricating the same

Growing community of inventors

Daejeon, South Korea

Sung Min Yoon