Samsung Electronics Co., Ltd.

Snu Rdb Foundation

Sung Min Seo

Jun Ho Cheon

Young June Park

Seong Jin Jang

Gil Su Kim

Jong Min Oh

A method for reading data stored in a fuse device included in a memory device including a memory cell array is provided. The method comprises reading trimming data of the fuse device, wherein the trimming data is related to trimming a level of voltage or a level of current used for an operation of the memory device; and after the reading the trimming data, reading defective cell address data of the fuse device, wherein the defective cell address data is related to defective cells in the memory cell array.

Method of reading data stored in fuse device and apparatuses using the same

Embodiments feature a sensor including a nanostructure and methods for manufacturing the same. In some embodiments, a sensor includes a substrate, a first electrode disposed on the substrate, and a second electrode disposed on the substrate. The second electrode is spaced apart from the first electrode and surrounding the first electrode. The sensor includes at least one nanostructure contacting the first electrode and the second electrode, in which the nanostructure is configured to vary an electrical characteristic according to an object to be sensed.

Nanostructure sensors

Growing community of inventors

Seoul, South Korea

Sung Min Seo