Samsung Electronics Co., Ltd.

Sung-min Huh

Hee-bom Kim

Dong-Wan Kim

Jin-sik Jung

Hoon Bae Kim

Dong-gun Lee

Woo-Sung Han

Seong-woon Choi

Chan-Uk Jeon

Jin-Hyung Park

Hee-young Kang

Byoung-Sup Ahn

Jeung-woo Lee

Chang-kwon Hwangbo

Suk-ho Lee

A microscope includes optics configured to direct beams onto an object including a reflective material, a detector configured to receive a field spectrum formed by beams reflected by the object, and a calculator configured to reconstruct an image of the object from the field spectrum detected by the detector.

Microscope and method of providing image data using the same

A reflective photomask and a method of determining or optimizing thicknesses of layers of the reflective photomask are provided. The reflective photomask may include a substrate, a reflective layer, an absorptive pattern, and a spacer. The substrate may include a reflective region and an absorptive region, the reflective layer may be formed between the reflective and absorptive regions, the absorptive pattern may be formed on the reflective layer corresponding to the reflective region, and the spacer may be formed at an upper portion, lower portion, or inside of the reflective layer so as to correspond to the reflective region.

Reflective photomasks and methods of determining layer thicknesses of the same

In a reflecting mask, an apparatus for fixing the reflecting mask and a method of fixing the reflecting mask, voltages are applied to elements of a conductive pattern spaced apart from each other on a rear face of the reflecting mask to fix the reflecting mask by using electrostatic forces. A flatness of the fixed reflecting mask is measured, and the electrostatic forces provided to portions of the reflecting mask are selectively adjusted in accordance with a measured result obtained from the measuring part, such that the reflecting mask is horizontally fixed and is substantially flat.

Reflecting mask, apparatus for fixing the reflecting mask and method of fixing the reflecting mask

A photomask has highly reliable assist patterns, and a method of fabricating the same is provided. The photomask includes a transparent substrate, circuit pattern and assist patterns. The circuit pattern recessed into the transparent substrate relative to a surface thereof has a first thickness, and assist patterns located adjacent to, and spaced apart from, the circuit pattern are recessed into the transparent substrate relative to the surface thereof while having a second thickness less than the first thickness.

Photo mask having assist pattern and method of fabricating the same

A binary photomask with an improved resolution and a method of manufacturing the same are provided. The binary photomask may include a substrate, a transmission-prevention pattern formed on the substrate to define a circuit pattern, and a compensation layer configured to change light transmitted through the binary photomask based on a topology of the compensation layer and arranged on the transmission-prevention layer and/or the substrate.

Binary photomask having a compensation layer

Provided are a method of correcting a critical dimension (CD) in a photomask and a photomask having a corrected CD using the method. The method may include providing a substrate that is transparent with respect to an incident light, forming shielding patterns on the substrate to form a photomask, detecting a CD error region of the shielding patterns, and forming a correction film to vary an intensity of the incident light in the CD error region to correct critical dimensions (CDs) of circuit patterns formed by the shielding patterns.

Method of correcting critical dimension in photomask and photomask having corrected critical dimension using the method

The reflective photomask may include a substrate, a reflective layer formed on the substrate, an absorption pattern formed on the reflective layer and over a first portion of the substrate. A compensatory portion may be formed over at least a second portion of the substrate. The second portion is adjacent to the first portion, and the compensatory portion is thinner than the absorption pattern.

Reflective photomask, method of fabricating the same, and reflective blank photomask

A method of manufacturing an extreme ultra-violet lithography (EUVL) alternating phase-shift mask comprises preparing a substrate having a reflective layer, forming a light-shielding layer pattern on the reflective layer to cover part of the reflective layer while leaving a reflective region of the reflective layer exposed, forming a trench in a phase-shift region of the reflective layer by etching the reflective layer, and changing the physical structure of a non phase-shift region of the reflective region to lower its reflectivity with respect to extreme ultra-violet (EUV) light.

Method of manufacturing EUVL alternating phase-shift mask

A photomask ensures the transfer of a pattern having a uniform and desired CD onto a substrate from which an electronic device or the like is made. The photomask includes a transparent substrate, a light-shielding film on the front side of the substrate and defining a mask pattern of transmission regions dedicated for pattern formation, and an auxiliary pattern on the front side of the substrate that alters the intensity of the light beam passing through the substrate. After the mask pattern is formed, the photomask is tested to determine variations between the desired (target) CD and the CDs of the features of a pattern transcribed onto a test wafer using the photomask. A density function in which characteristics of the auxiliary pattern to be formed, e.g., the size, depth and/or pitch of recesses, is developed as a prediction of the intensity distribution of the light beam transmitted through the substrate once the auxiliary pattern is present at the front side of the substrate. The photomask is then repaired/corrected by designing and forming the auxiliary pattern according to the density function so as to prevent local or global variations between the desired CD and the actual CD from occurring.

Growing community of inventors

Yongin-si, South Korea

Sung-min Huh