Sungkyunkwan University

Sung-Min Cho

Woo-Jae Kim

Young-kwan Lee

Jae-Do Nam

Chan-Hwa Chung

Hoo-Gon Choi

Youn-Jin Oh

Chan-Hwa Jung

The present invention relates to a direct methanol fuel cell having reduced methanol crossover. The fuel cell includes a layer of material for controlling the diffusion rate of fuel.

Direct methanol fuel cell having reduced crossover of methanol and comprising a layer of material for controlling the diffusion rate of fuel

Disclosed is a method for forming copper interconnections of a semiconductor component using an electroless plating system, which enables copper to be grown only in corresponding interconnection regions. In such a method, a wafer is cleaned, the wafer is pretreated with a metal seed solution so as to cause spontaneous catalytic activation and simultaneously the process temperature is varied to grow metal seed particles from the metal seed pretreating solution, the wafer is cleaned to remove the metal seed from the wafer surface, and the wafer is finally plated with an electroless plating bath to grow copper in the metal seed formed regions. This method simplifies the processes and reduces process costs by substituting a wet process for the existing vacuum pretreating process. Also, a wafer planarization process can be omitted by selectively growing copper only in desired interconnections. Compared with the existing ultraviolet radiation photo process, the selective copper growth process of the method has an advantage of being much simpler.

Method for forming copper interconnections in semiconductor component using electroless plating system

Growing community of inventors

Gyeonggi-do, South Korea

Sung-Min Cho