Advanced Semiconductor Engineering, Inc.

National Sun Yat-sen University of Kaohsiung

Sung-Mao Wu

Chi-Tsung Chiu

Chih-Pin Hung

Tzyy-Sheng Horng

Kun-Ching Chen

Wei-Chung Wang

Kuo-Pin Yang

Chian-Chi Lin

Hsueh-An Yang

Chien-Hsun Chen

Chien-Hsiang Huang

Provided are a stacked LC resonator and a band pass filter using the same. The stacked LC resonator includes a flat metal base layer; a plurality of spiral inductors disposed layer by layer, corresponding to the flat metal base layer; and a plurality of dielectric layers, formed between the spiral inductors, and between the flat metal base layer and the spiral inductor corresponding to the flat metal base layer. The band pass filter includes two resonators with symmetrical structures, wherein the spiral inductors of the two resonators are disposed corresponding to each other.

Stacked LC resonator and band pass filter using the same

The invention relates to a microelectromechanical microphone packaging system. The microelectromechanical microphone packaging system comprises a substrate, a chip, a microelectromechanical microphone, a conductive glue, a non-conductive glue and a cover. The substrate has a first surface. The chip is mounted on the first surface of the substrate. The microelectromechanical microphone is mounted on the first surface of the substrate, and electrically connected to the chip. The chip is enclosed by the non-conductive glue. The non-conductive glue is enclosed by the conductive glue. The cover is mounted on the first surface of the substrate to form a containing space, and has an acoustic aperture. The microelectromechanical microphone packaging system utilizes the conductive glue enclosing the chip and the non-conductive glue to shield interference from outside noise and obtain a shielding effect. In addition, the cover does not need to be made of metal material.

Microelectromechanical microphone packaging system

A semiconductor package structure with a microstrip antenna comprises a packaging substrate, a chip and a microstrip radiation device. The packaging substrate has an upper surface having a packaging area on which the chip is disposed and a peripheral area on which the microstrip radiation device is disposed for transceiving a signal of the chip.

Semiconductor package structure with microstrip antennan

An inductor and capacitor implemented with build-up vias. The inductor and capacitor comprise a conductor plane, a dielectric layer, an inductor/capacitor inducing build-up via and a conductor layer. There is a conducting material in the inductor/capacitor inducing build-up via and a fist end thereof is in contact with the conductor plane. The length of the inductor inducing build-up via is larger than one fourth of a signal wavelength while the length of the conductor inducing build-up via is smaller than one fourth of a signal wavelength.

Inductor and capacitor formed of build-up vias

An integrated capacitor on a packaging substrate. The integrated capacitor comprises a conductor plane, a first dielectric layer and a signal transmission layer. The conductor plane has an extrusion layer of a first thickness. The first extrusion layer and the conductor plane are made of the same material. The first dielectric layer is formed on the conductor plane. The signal transmission layer is formed on the first dielectric layer.

Integrated capacitor on packaging substrate

An Impedance standard substrate for adjusting a vector network analyzer mainly comprises a fixer and a flexible tape, wherein the vector network analyzer has a plurality of pairs of probes disposed at an underneath of the impedance standard substrate and an upside of the impedance standard substrate. There are thru-circuits formed at the flexible tape, wherein the flexible tape has electrically connecting contacts and the contacts are electrically connected to each other. The flexible tape is bent and fixed to a fixer such that the contacts are faced to the corresponding probes respectively. Furthermore, the impedance standard substrate also includes a plurality of pairs of open-circuits, short-circuits and load-circuits formed at the flexible tape.

Impedance standard substrate and correction method for vector network analyzer

A high frequency substrate includes a first metal layer, a first dielectric layer, a second metal layer, a second dielectric layer and a high-frequency signal transmission line. The first dielectric layer is formed on the first metal layer, and the second metal layer is formed on the first dielectric layer. The first and second metal layers are maintained in a stable voltage status due to the high dielectric coefficient of the first dielectric layer. Besides, the second dielectric layer is formed on the second metal layer. High speed and high frequency transmission are achieved when signals transmitting in the high-frequency transmission line formed on the second dielectric layer due to the low dielectric coefficient of the second dielectric layer.

Growing community of inventors

Kaohsiung, Taiwan

Sung-Mao Wu