Samsung Electronics Co., Ltd.

Lg Semicon Co., Ltd.

Other

The Industry & Academic Cooperation in Chungnam National University (iac)

Sung-man Lee

Jong-hyuk Lee

Jae-Hee Ha

Hong Koo Baik

Chang-Hoon Lee

Chunjoong Kim

Byung-Am Lee

Jae-Sun Cho

Young-Kyu Lim

Byung-Seol Ahn

Jung-Lan Lee

An anode active material contains a carbon composite, and the carbon composite may include a core particle including hard carbon and a skin layer placed on a surface of the core particle. The skin layer includes graphite particles attached to the surface of the core particle at a predetermined angle with respect to the surface and the graphite particles include graphite-based carbon material. The skin layer further includes an amorphous carbon layer filling a space between the graphite particles and attaching the graphite particles to the surface of the core particle. The carbon composite has a ratio of Ito Iin a range of 0.8 to 1.5 (0.8&#x2264;I/I&#x2264;1.5) in Raman analysis where Iis the intensity of D peak at 1300 cmto 1400 cmand Iis the intensity of G peak at 1500 cmto 1600 cm.

Anode active material including carbon composite for lithium secondary battery and method of manufacturing the same

The present invention relates to a negative active material for a rechargeable lithium battery, a method of manufacturing the negative active material, and a rechargeable lithium battery including the negative active material. The negative active material includes a first graphite particle including graphite pieces; and at least one second particle selected from the group consisting of an element particle, an element compound particle, a composite particle, and a carbon composite particle, and a combination particle thereof, wherein the element particle, the element compound particle, the composite particle, and the carbon composite particle are selected from the group consisting of Si, Sn, Al, Ge, Pb, and combinations thereof; wherein each of the graphite pieces has a thickness ranging from 0.01 &#x3bc;m to 0.1 &#x3bc;m and the graphite pieces are linked to one another forming a curved side; and wherein the at least one second particle is dispersed between the graphite pieces.

Negative active material for lithium secondary battery, method for preparing the same, negative electrode comprising the same, and lithium secondary battery comprising same

The present invention relates to a negative active material for a rechargeable lithium battery, a method of manufacturing the negative active material, and a rechargeable lithium battery including the negative active material. The negative active material includes a sphere-shaped first graphite particle that a first particle precursor, a flake-shaped graphite piece, is linked to each other; and at least one second particle dispersed between the flake-shaped graphite pieces inside the sphere-shaped first graphite particle and selected from the group consisting of at least one element particle selected from the group consisting of Si, Sn, Al, Ge, Pb, and combinations thereof; at least one element compound particle selected from the group consisting of Si, Sn, Al, Ge, Pb, and combinations thereof; a composite particle including at least one element selected from the group consisting of Si, Sn, Al, Ge, Pb, and combinations thereof; a carbon composite particle including at least one element selected from the group consisting of Si, Sn, Al, Ge, Pb, and combinations thereof; and a combination particle thereof.

The present invention relates to a system and method for operating an end-to-end security channel between an IC card and a server on a communication network. A method for connecting an end-to-end security channel between an IC card and a server on a communication network includes the steps of: generating, by the server, a random number Rs for transmission to the IC card, generating an E(Rs) by encrypting the random number Rs by a user public key, and transmitting the E(Rs) to the IC card through the communication network; receiving, by the IC card, the E(Rs) through the communication network and extracting the random number Rs by decrypting the E(Rs) by a user private key; generating, by the IC card, a random number Rc to be transmitted to the server, generating a session key K' by the random number Rs and the random number Rc, and generating a first card verifier MAC by encrypting the random number Rs by the session key K&#x2032;; transmitting, by the IC card, the random number Rc and the first card verifier MAC to the server through the communication network; receiving, by the server, the random number Rc and the first card verifier MAC through the communication network, generating a session key K by the random number Rs and the random number Rc, and generating a first server verifier MAC by encrypting the random number Rs by the session key K; and comparing, by the server, the first card verifier MAC and the first server verifier MAC to certify the session key K.

System and method for operating end-to-end security channel between server and IC card

A method and apparatus of classifying repetitive defects on a substrate is provided. Defects of dies on the substrate are sequentially compared with a predetermined reference die. Sets of coordinates are marked on the reference die which are corresponding to the position of the defects on the dies on the substrate. Then, repetitive defects are classified which are repeatedly marked in a specified region on the reference die.

Method and apparatus for classifying repetitive defects on a substrate

The present invention relates to a diffusion barrier layer for a semiconductor device and fabrication method thereof. The diffusion barrier layer according to the present invention is fabricated by forming a diffusion barrier layer containing a refractory metal material and an insulating material on an insulating layer and in a contact hole, wherein the insulating layer being partially etched to form the contact hole, is formed on a semiconductor substrate; and annealing the diffusion barrier layer. Therefore, an object of the present invention is to provide a diffusion barrier layer for a semiconductor device, which is of an amorphous or microcrystalline state and thermodynamically stable even at a high temperature since an insulating material is bonded to a refractory metal material in the diffusion barrier layer.

Growing community of inventors

Chuncheon, South Korea

Sung-man Lee