Skhynix Inc.

Sung Lae Cho

Jun Ku Ahn

Hyung Keun Kim

Jun Young Lim

Jong Ho Lee

Young Ho Lee

Beom Seok Lee

Hwan Jun Zang

Woo Tae Lee

Sang Hyun Ban

Uk Hwang

Gwang Sun Jung

Ye Cheon Cho

A semiconductor device includes a stack structure including first electrodes and insulating layers alternately stacked on each other, a second electrode passing through the stack structure, and variable resistance patterns each interposed between the second electrode and a corresponding one of the first electrodes. Each of the first electrodes includes a first sidewall facing the second electrode, and each of the insulating layers includes a second sidewall facing the second electrode. At least a part of each of the variable resistance patterns protrudes farther towards the second electrode than the second sidewall.

Semiconductor device and manufacturing method of the semiconductor device

A chalcogenide material may include germanium (Ge), arsenic (As), selenium (Se) and from 0.5 to 10 at % of at least one group 13 element. A variable resistance memory device may include a first electrode, a second electrode, and a chalcogenide film interposed between the first electrode and the second electrode and including from 0.5 to 10 at % of at least one group 13 element. In addition, an electronic device may include a semiconductor memory. The semiconductor memory may include a column line, a row line intersecting the column line, and a memory cell positioned between the column line and the row line, wherein the memory cell comprises a chalcogenide film including germanium (Ge), arsenic (As), selenium (Se), and from 0.5 to 10 at % of at least one group 13 element.

Chalcogenide material, variable resistance memory device and electronic device

Growing community of inventors

Icheon, South Korea

Sung Lae Cho