Samsung Electronics Co., Ltd.

Sung-lae Cho

Jin-il Lee

Young-Lim Park

Hye-Young Park

Byoung-Jae Bae

Choong-Man Lee

Hye-young Park

Gwan-Hyeob Koh

Bong-jin Kuh

Se-Ho Lee

Su-Jin Ahn

Suk-Hun Choi

Young-Nam Hwang

Do-hyung Kim

Kyung-Chang Ryoo

Joon-Sang Park

Chang-Wook Jeong

Yoon-Ho Son

Su-Youn Lee

Ji-Eun Lim

Do-Hyung Kim

Jang-Eun Lee

Yong-Ho Ha

Dong-Hyun Im

Yoon-jong Song

Ji-Hye Yi

Soon-Oh Park

Sang-Don Nam

Sang-Wook Lim

Ik-Soo Kim

Kyung-Rae Byun

Jin-II Lee

Jin-Il Lee

In one aspect, a method of forming a phase change material layer is provided. The method includes supplying a reaction gas including the composition of Formula 1 into a reaction chamber, supplying a first source which includes Ge(II) into the reaction chamber, and supplying a second source into the reaction chamber. Formula 1 is NRRR, where R, Rand Rare each independently at least one selected from the group consisting of H, CH, CH, CH, CH, Si(CH), NH, NH(CH), N(CH), NH(CH) and N(CH).

Method of forming phase change material layer using Ge(II) source, and method of fabricating phase change memory device

Provided are methods of forming a material layer by chemically adsorbing metal atoms to a substrate having anions formed on the surface thereof, and a method of fabricating a memory device by using the material layer forming method. Accordingly, a via hole with a small diameter can be filled with a material layer without forming voids or seams. Thus, a reliable memory device can be obtained.

Methods of forming a material layer and methods of fabricating a memory device

Provided are a phase change memory device and a method for forming the phase change memory device. The method includes forming a phase change material layer by providing reactive radicals to a substrate. The reactive radicals may comprise precursors for a phase change material and nitrogen.

Phase change memory device

Method of forming phase change material layer using Ge(II) source, and method of fabrication phase change memory device

A method of forming a phase change material layer includes preparing a substrate having an insulator and a conductor, loading the substrate into a process housing, injecting a deposition gas into the process housing to selectively form a phase change material layer on an exposed surface of the conductor, and unloading the substrate from the process housing, wherein a lifetime of the deposition gas in the process housing is shorter than a time the deposition gas takes to react by thermal energy.

Method of forming a phase change material layer, method of forming a phase change memory device using the same, and a phase change memory device so formed

A phase-change memory device has an oxidation barrier layer to protect against memory cell contamination or oxidation. In one embodiment, a semiconductor memory device includes a molding layer disposed over semiconductor substrate, a phase-changeable material pattern, and an oxidation barrier of electrically insulative material. The molding layer has a protrusion at its upper portion. One portion of the phase-changeable material pattern overlies the protrusion of the molding layer, and another portion of the phase-changeable material pattern extends through the protrusion. The electrically insulative material of the oxidation barrier may cover the phase-changeable material pattern and/or extend along and cover the entire area at which the protrusion of the molding layer and the portion of the phase-change material pattern disposed on the protrusion adjoin.

Semiconductor devices having phase change memory cells, electronic systems employing the same and methods of fabricating the same

Method of forming a phase change memory device

The present invention provides metal precursors for low temperature deposition. The metal precursors include a metal ring compound including at least one metal as one of a plurality of elements forming a ring. Methods of forming a metal thin layer and manufacturing a phase change memory device including use of the metal precursors is also provided.

Metal precursors for low temperature deposition and methods of forming a metal thin layer and manufacturing a phase-change memory device using the metal precursors

A gap filling method and a method for forming a memory device, including forming an insulating layer on a substrate, forming a gap region in the insulating layer, and repeatedly forming a phase change material layer and etching the phase change material layer to form a phase change material layer pattern in the gap region.

Gap filling method and method for forming semiconductor memory device using the same

Provided are methods of fabricating a semiconductor device including a phase change layer. Methods may include forming a dielectric layer on a substrate, forming an opening in the dielectric layer and depositing, on the substrate having the opening, a phase change layer that contains an element that lowers a process temperature of a thermal treatment process to a temperature that is lower than a melting point of the phase change layer. Methods may include migrating a portion of the phase change layer from outside the opening, into the opening by the thermal treatment process that includes the process temperature that is lower than the melting point of the phase change layer.

Methods of fabricating semiconductor device including phase change layer

Example embodiments may provide phase-change material layers and a method of forming a phase-change material layer and devices using the same by generating a plasma including helium and/or argon in a reaction chamber, forming a first material layer on the object by introducing a first source gas including a first material, forming a first composite material layer on the object by introducing a second source gas including a second material into the reaction chamber, forming a third material layer on the first composite material layer by introducing a third source gas including a third material, and forming a second composite material layer on the first composite material layer by introducing a fourth source gas including a fourth material. Example embodiment phase-change material layers including carbon may be more easily and/or quickly formed at lower temperatures under the helium/argon plasma environment by providing the source gases for various feeding times. Example embodiments may also include memory devices using phase-change memory layers.

Phase-change material layers, methods of forming the same, phase-change memory devices having the same, and methods of forming phase-change memory devices

Methods of fabricating integrated circuit memory cells and integrated circuit memory cells are disclosed. Formation of an integrated circuit memory cell include forming a first electrode on a substrate. An insulation layer is formed on the substrate with an opening that exposes at least a portion of a first electrode. An amorphous variable resistivity material is formed on the first electrode and extends away from the first electrode along sidewalls of the opening. A crystalline variable resistivity material is formed in the opening on the amorphous variable resistivity material. A second electrode is formed on the crystalline variable resistivity material.

Variable resistance non-volatile memory cells and methods of fabricating same

A phase change memory device includes a lower electrode provided on a substrate, an interlayer insulating layer including a contact hole exposing the lower electrode, and covering the substrate, a resistant material pattern filling the contact hole, a phase change pattern interposed between the resistant material pattern and the interlayer insulating layer, and extending between the resistant material pattern and the lower electrode, wherein the resistant material pattern has a higher resistance than the phase change pattern, and an upper electrode in contact with the phase change pattern, the upper electrode being electrically connected to the lower electrode through the phase change pattern.

Phase change memory device including resistant material

A method includes forming a phase change material layer on a substrate using a deposition process that employs a process gas. The process gas includes a germanium source gas, and the germanium source gas includes at least one of the atomic groups '&#x2014;N&#x2550;C&#x2550;O', '&#x2014;N&#x2550;C&#x2550;S', &#x201c;&#x2014;N&#x2550;C&#x2550;Se&#x201d;, &#x201c;&#x2014;N&#x2550;C&#x2550;Te&#x201d;, &#x201c;&#x2014;N&#x2550;C&#x2550;Po&#x201d; and &#x201c;&#x2014;C&#x2261;N&#x201d;.

Methods of forming a semiconductor device including a phase change material layer

Growing community of inventors

Yongin-si, South Korea

Sung-lae Cho