Skhynix Inc.

Industry-university Cooperation Foundation Sogang University

Sung-Kyu Min

Hyo-June Kim

Seung-Beom Baek

Jong-Chul Lee

Ja-Chun Ku

Byung-Jick Cho

Won-Ki Ju

Hyun-Kyu Kim

Jin-Kyu Lee

Hee-Woo Rhee

Myoung-Sub Kim

Jae-Jin Shin

Chi-Ho Kim

Kook Heon Char

Bongjin Moon

Su-Jin Chae

Do Young Yoon

Se Jung Park

Dae-Gun Kang

Su-Yeon Lee

An electronic device may include a semiconductor memory, and the semiconductor memory may include a plurality of memory cells each including a variable resistance layer; a substituted dielectric layer filling a space between the plurality of memory cells; and an unsubstituted dielectric layer disposed adjacent to the variable resistance layer of each of the plurality of memory cells, wherein the unsubstituted dielectric layer may include a flowable dielectric material.

Electronic device and method for fabricating the same

A semiconductor memory may include: a first stacked structure including a first word line disposed over a substrate and extended in a first direction, a first bit line disposed over the first word line and extended in a second direction crossing the first direction, and a first variable resistance layer interposed between the first word line and the first bit line; and a second stacked structure including a second bit line disposed over the first stacked structure and extended in the second direction, a second word line disposed over the second bit line and extended in the first direction, and a second variable resistance layer interposed between the second word line and the second bit line; and a first selecting element layer interposed between the first bit line and the second bit line.

Electronic device

According to embodiments, a semiconductor memory may include: a variable resistance pattern disposed over a substrate and extended in a first direction; first and second structures including a plurality of interlayer dielectric layers and a plurality of conductive layers which are alternately stacked over the substrate, and contacted with one side surface and the other side surface of the variable resistance pattern, respectively, wherein the first stacked structure has a line shape extended in a first direction and the second stacked structure has a pillar shape; and a pillar-shaped conductive pattern contacted with one side surface of the second stacked structure, which is not contacted with the variable resistance pattern.

This invention is related to a reactive nanoparticular cyclodextrin derivative useful as a porogen and a low dielectric matrix, with excellent mechanical properties and uniformly distributed nanopores, manufactured by sol-gel reaction of the above reactive cyclodextrin. Furthermore, this invention also is related to an ultralow dielectric film, with uniformly distributed nanopores, a relatively high porosity of 51%, and a relatively low dielectric constant of 1.6, manufactured by thin-filming of the conventional organic or inorganic silicate precursor by using the above reactive nanoparticular cyclodextrin derivative as a porogen.

Reactive cyclodextrin derivatives as pore-forming templates, and low dielectric materials prepared by using the same

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Seoul, South Korea

Sung-Kyu Min