Samsung Electronics Co., Ltd.

Sung-Kyu Jo

Jung-Dal Choi

Ki-Tae Park

Seung-Jae Lee

Jin-Yub Lee

Jong-Hoon Lee

Yun-ho Choi

Sung-Joon Kim

Jin-hyoung Kwon

Yong-Tae Yim

Ho-Kil Lee

A method of operating a non-volatile memory includes; during power-on, reading control information from an information block and lock information from an additional information block, then upon determining that a secure block should be locked, generating a lock enable signal that inhibits access to data stored in the secure block, and a read-only enable signal that prevents change in the data stored in the additional information block.

Non-volatile memory device and method of operating

Disclosed are program and read methods for a nonvolatile memory system, including determining to program first data in which one of fast and normal modes; providing the first data with an error code generated by a multi-bit ECC engine, in the fast mode, and generating second data; programming the second data in a cell array by a program voltage having a second start level higher than a first start level; and reading the second data from the cell array, the second data being output after processed by the multi-bit ECC engine that detects and corrects an error from the second data.

Nonvolatile memory device, system, and method providing fast program and read operations

Semiconductor memory devices are provided that include a nonvolatile memory that has a plurality of memory cells and a memory controller that is configured to control at least some of the operations of the nonvolatile memory. The memory controller include an error correction unit. Moreover, the memory controller is configured to determine whether a read failure that occurs during a read operation of a first of the plurality of memory cells is due to charge leakage based at least in part on an output of the error correction unit. Related methods are also disclosed.

Semiconductor memory devices that are configured to analyze read failures and related methods of operating such devices

A page buffer for a non-volatile semiconductor memory device includes a switch configured to couple a first bitline coupled to a first memory cell to a second bitline coupled to a second memory cell, a first latch block coupled to the first bitline and configured to transfer a first latch data to the first memory cell, and a second latch block coupled to the second bitline and the first latch block, and configured to transfer a second latch data to the second memory cell.

3-level non-volatile semiconductor memory device and method of driving the same

A memory system is provided which includes a host, a flash memory device, and a dual port memory which exchanges data with the host and the flash memory device. The flash memory device utilizes a portion of the dual port memory as a working memory.

Memory system and method with flash memory device

A sense amplifier circuit for a flash memory device is disclosed. The sense amplifier including a first transistor controlled by a first voltage applied via a selected bit line, and a second transistor controlled by a second voltage applied via an unselected bit line. The second transistor has a current driving capability lower than a current driving capability of the first transistor.

Growing community of inventors

Gyeonggi-do, South Korea

Sung-Kyu Jo