Hynix Semiconductor Inc.

Hyundai Electronics Industries Co. Ltd.

D&d Pharmatech Inc.

Theraly Pharmaceuticals, Inc.

Medi Bio Lab. Co., Ltd.

Sung Kwon Lee

Won Bae Kim

Chan Kim

Dae Sung Lee

Kang Choon Lee

Seulki Lee

Tae Hyung Kim

Su Young Chae

Yu Seok Youn

Young Jin Kim

Yoon Seok Ko

Min Jung Ryu

Ik Jin In

The present disclosure relates to an exendin-4 analog PEGylated with polyethylene glycol or a derivative thereof, a preparation method, and a pharmaceutical composition for prevention or treatment of diabetes containing the same as an active ingredient. According to the present invention, the yield of an exendin-4 analog can be increased via the selective PEGylation by using exendin-4 in which a cysteine is introduced into #40 site of the C-terminal, and treatment effect of medications can be increased, so that the exendin-4 analog can be usefully applied as a composition for prevention or treatment of diseases caused by insulin hypersecretion.

Exendin-4 analogue pegylated with polyethylene glycol or derivative thereof, preparation method thereof, and pharmaceutical composition for preventing or treating diabetes, containing same as active ingredient

The present invention provides a composition for preventing, improving or treating periodontal diseases comprising extract of mangosteen. The composition of the present invention has excellent anti-bacterial and anti-inflammatory effects against bacteria inducing periodontal diseases as comprising extract of mangosteen, or alpha-mangosteen or gamma-mangosteen derived from thereof, and thereby it can be widely used for medicines and foods for preventing, improving or treating periodontal diseases.

Composition for preventing or alleviating periodontal diseases, containing, as active ingredient, mangosteen extract or &#x3b1;- or &#x3b3;-mangosteen

Disclosed herein are an N-terminal modified PEG-TRAIL conjugate and a preparation method and use thereof. The PEG-TAIL conjugate has pharmaceutical activity identical or similar to that of native TRAIL (TNF-related apoptosis-inducing ligand) with extended in vivo half-life and enhanced stability. Compared to native TRAIL, the PEG-TAIL conjugate exhibits high solubility and solution stability, with highly improved pharmacokinetic profiles. Thus, the PEG-TAIL conjugate may be very useful for preventing and treating proliferative diseases and autoimmune diseases.

N-terminal modified PEG-TRAIL

An output driver circuit includes a predriver control signal generation unit receiving a pull-up code signal, a pull-down code signal, a predriver selection signal and a read control signal and generating a pull-up control signal and a pull-down control signal; a predriver driven in response to the pull-up control signal and the pull-down control signal and receiving an internal data to drive a pull-up driving signal and a pull-down driving signal; and a driver receiving the pull-up driving signal and the pull-down driving signal and driving an output data outputted to a DQ pad, wherein the pull-up control signal and the pull-down control signal are enabled when the predriver is selected in a read operation period and a preset combination of the code signals is inputted.

Predriver and output driver circuit using the same

Fabricating thin film transistors. A gate electrode is formed on a substrate. A gate oxide film is then formed on the gate electrode. A polysilicon layer is deposited on the gate oxide film. An impurity ion is implanted into the polysilicon layer to control a threshold voltage of the polysilicon layer. A mask is formed on the polysilicon layer above the gate electrode, having the same width as the gate electrode. A second impurity ion is implanted into the exposed portion of the polysilicon layer using the mask, to form a lightly doped offset region on a drain region. The mask is removed. A second mask is formed on the polysilicon layer so as to cover a portion of the gate electrode and the light doped offset region. A Third impurity ion is implanted into the polysilicon layer using the second mask to form source/drain regions. The mask is removed.

Fabricating a thin film transistor having better punch through resistance and hot carrier effects

A method for manufacturing a semiconductor device is provided which suppresses migration of lower interconnectors formed on a borophosphosilicate glass (BPSG) layer toward upper interconnectors as a result of secondary reflowing of the BPSG layer during subsequent thermal processing, thereby preventing the formation of electrical shorts. The semiconductor device manufacturing method includes: forming a transistor; depositing a first interlevel dielectric film (ILD) to cover the transistor; depositing a BPSG layer as a planarization layer on the first interlevel dielectric film; reflowing the BPSG layer; etching the BPSG layer using Ar ion sputtering until a portion of the film is exposed, thereby planarizing the surfaces of the first ILD and the BPSG layers forming an interconnector on the exposed portion of the first interlevel dielectric film; depositing a second interlevel dielectric film to cover the interconnector and the BPSG layer; and forming metal electrodes on the second interlevel dielectric film, the metal electrodes being in contact with predetermined regions of the transistor.

Semiconductor device manufacturing method for preventing electrical shorts between lower and upper interconnection layers

A method for fabricating a semiconductor device includes the steps of: forming a transistor on a semiconductor substrate; forming a first interlayer insulating film over the entire structure including the transistor; planarizing the first interlayer insulating film; forming a stabilized insulating film consisting of an insulating material having low thermal expansion and shrinkage on the first interlayer insulating film; forming an interconnection line on the stabilized insulating film; forming a second interlayer insulating film on the stabilized insulating film to cover the interconnection line; and forming a metal electrode on the second interlayer insulating film in order to contact the semiconductor substrate. The interconnection line on the interlayer insulating film does not move as a result of the thermal treatment process, and thus does not cause shorts with the metal electrode. As a result, the leakage current is prevented and the electrical properties of the semiconductor is improved.

Growing community of inventors

Seoul, South Korea

Sung Kwon Lee