Samsung Electronics Co., Ltd.

Sung-Kwan Choi

Ji-Young Kim

Yoo-Sang Hwang

Hyun-Woo Chung

Hyeong-sun Hong

Gyo-young Jin

Dae-Ik Kim

Yong-Chul Oh

Hyoung-sub Kim

Sung-eui Kim

Dong-Soo Woo

A method of manufacturing a semiconductor device includes forming an isolation layer on a substrate, where an active pattern is defined, forming an insulating interlayer on the active pattern of the substrate and the isolation layer, removing portions of the insulating interlayer, the active pattern and the isolation layer to form a first recess, forming a first contact in the first recess on a first region of the active pattern exposed by the first recess, removing portions of the active pattern and the isolation layer in the first recess by performing an isotropic etching process, to form an enlarged first recess, and

Semiconductor devices and methods of manufacturing the same

A semiconductor device may include a semiconductor substrate with first and second spaced apart source/drain regions defining a channel region therebetween and a control gate structure on the channel region between the first and second spaced apart source/drain regions. More particularly, the control gate structure may include a first gate electrode on the channel region adjacent the first source/drain region, and a second gate electrode on the channel region adjacent the second source/drain region. Moreover, the first and second gate electrodes may be electrically isolated. Related devices, structures, methods of operation, and methods of fabrication are also discussed.

Semiconductor devices including dual gate electrode structures and related methods

A semiconductor device includes a semiconductor substrate including an active region defined by a device isolation layer, a trench extending across the active region, a buried gate filling a part of the trench and including a base portion, a first extension portion, and a second extension portion extending along an inner wall of the trench, and having different heights at sides of the base portion, and a capping layer formed on the buried gate and filling the trench.

Semiconductor device

Growing community of inventors

Hwaseong-si, South Korea

Sung-Kwan Choi