Skhynix Inc.

Dongbu Hitek Co., Ltd.

Sung-Kun Park

Pyong-Su Kwag

Yun-Hui Yang

Young-Jun Kwon

Ho-Ryeong Lee

Kyoung-In Lee

Cha-Young Lee

Min-Ki Na

Donghyun Woo

Dong-Hyun Woo

Sun-Ho Oh

Hye-Won Mun

Kwang Hwangbo

Jung-Hoon Kim

Nam-Yoon Kim

An image sensor includes a first active region including a first floating diffusion region, a first transistor active region, and a first isolation structure for electrically isolating the first floating diffusion region from the first transistor active region, wherein the first isolation structure comprises a first P-type doped region disposed on one corner of the first active region and a second P-type doped region disposed in a center of the first active region, the first P-typed doped region and the second P-type doped region being electrically coupled to each other.

Image sensor having P-type isolation structure

An image sensor is provided to include an active region which comprises: a floating diffusion region; a transfer transistor gate region; transistor active regions; and a well-tap region. The transfer transistor gate region may have a diagonal bar shape to isolate the floating diffusion region in a first corner of the active region. The well-tap region may be positioned between the transfer transistor gate region and the transistor active regions, and isolate the transfer transistor gate region from the transistor active regions.

Image sensor including active regions

An image sensor includes a first transfer gate formed over a substrate, and including a first projection; a second transfer gate formed over the substrate, neighboring the first transfer gate, and including a second projection; and a floating diffusion formed in the substrate, and partially overlapping with the first transfer gate and the second transfer gate, wherein the first projection and the second projection face each other.

Image sensor including dummy patterns positioned between adjacent transfer gates

An image sensing device includes a floating diffusion node, a reset circuit coupled between a supply terminal of a high voltage and the floating diffusion node, and suitable for resetting the floating diffusion node with the high voltage during a reference period based on a reset control signal, a photodiode coupled between a supply terminal of a low voltage and a coupling node, and suitable for generating a photocharge based on incident light during an exposure period, a transmission block coupled between the coupling node and the floating diffusion node, and suitable for transmitting the photocharge to the floating diffusion node during a transmission period based on a transmission control signal, and a selection circuit coupled between an input terminal of a boost control signal and an output terminal of a pixel signal, and suitable for generating the pixel signal with a boost voltage greater than the high voltage during the transmission period based on a selection control signal and a voltage applied to the floating diffusion node.

Image sensing device generating pixel signal with boost voltage and operating method thereof

Image sensor including transfer gates with projections extending from the sidewalls and method of fabricating the same

An image sensor device includes a photoelectric conversion element configured to receive incident light and generate photocharges in response to the received incident light; a floating diffusion coupled to the photoelectric conversion element to store the photocharges generated by the photoelectric conversion element, the floating diffusion having a first capacitance value; a conductive pattern electrically coupled to the floating diffusion; and a variable electrode located apart from the conductive pattern by a gap, wherein the conductive pattern and the variable electrode form a variable capacitor coupled to the floating diffusion and having a second capacitance value and operable to change an effective capacitance of the floating diffusion in response to a control signal applied to the variable electrode.

Image sensor

This technology relates to an image sensor. The image sensor may include a substrate including a photoelectric conversion element; a pillar formed over the photoelectric conversion element and having a concave-convex sidewall; a channel film formed along a surface of the pillar and for having at least one end coupled to the photoelectric conversion element; and a transfer gate formed over the channel film.

Image sensor and method for fabricating the same

An image sensor may include: a photoelectric conversion element suitable for generating a photo charge in response to incident light; and a transfer transistor suitable for transferring the photo charge generated by the photoelectric conversion element to a floating diffusion in response to a transfer signal, the transfer transistor comprising a first transfer gate formed over the photoelectric conversion element; an opening formed in the first transfer gate and exposing the photoelectric conversion element; a second transfer gate formed in the opening; and a channel layer interposed between the first and second transfer gates and between the photoelectric conversion element and the second transfer gate.

An image sensing device includes: a floating diffusion node; an initialization block suitable for initializing the floating diffusion node with a first voltage, based on an initialization control signal; a boosting block suitable for boosting the floating diffusion node with a second voltage, based on a boost control signal; a photodiode suitable for generating a photocharge based on incident light; a transmission block suitable for transmitting the photocharge to the floating diffusion node based on a transmission control signal; and a selection block suitable for generating a pixel signal corresponding to a voltage loaded on the floating diffusion node based on a selection control signal.

Image sensing device and method for driving the same

An image sensor includes a substrate including a photoelectric conversion element; a transfer gate formed over the photoelectric conversion element; and a channel layer controlled by the transfer gate, wherein the channel layer includes a first region which is in contacts with the photoelectric conversion element and a second region which is separated from the photoelectric conversion element, and the first region and the second region have different crystalline states from each other.

An image sensor is described. The image sensor includes a photodiode that is formed in a substrate, a floating diffusion region that vertically overlaps with a first portion of the photodiode, a shallow trench isolation (STI) region that vertically overlaps with a second portion of the photodiode and has an elbow shape, and a transfer gate that is adjacent to at least two sides of the photodiode and has an elbow shape.

Image sensor including transfer gates in deep trenches

An image sensor includes a photoelectric conversion element including a first impurity region and a second impurity region, wherein the first impurity region contacts a first surface of a substrate, wherein the second impurity region has conductivity complementary to the first impurity region and is formed in the substrate and below the first impurity region; a pillar formed over the photoelectric conversion element; a transfer gate formed over the photoelectric conversion element to surround the pillar; and a channel layer formed between the transfer gate and the pillar and contacting the photoelectric conversion element, wherein the channel layer contacts the first impurity region and has the same conductivity as the second impurity region.

Image sensor including vertical transfer gate

A method for fabricating an image sensor in accordance with an embodiment of the inventive concepts may include forming first and second photodiodes within a substrate, forming first and second gate electrodes over the substrate, the first gate electrode vertically partially overlapping the first photodiode and the second gate electrode vertically partially overlapping the second photodiode, forming an impurity injection region comprising first and second type impurities between the first and the second gate electrodes, and performing an annealing process to form a floating diffusion region comprising the first type impurities and a channel region comprising the second type impurities. The channel region surrounds lateral surfaces and a bottom surface of the floating diffusion region.

A nonvolatile memory device includes a substrate including a device isolation layer defining an active region, a floating gate and a selection gate arranged side by side at intervals of a first gap over the substrate, a coupling plate formed in the device isolation layer and overlapped with the floating gate, and a contact plug suitable for electrically coupling the coupling plate and the selection gate.

Nonvolatile memory device

A nonvolatile memory device may include: an isolation layer formed in a substrate and defining an active region; a control plug formed over the isolation layer; a floating gate formed over the substrate and including a plurality of fingers adjacent to the control plug with a gap provided therebetween; and a charge blocking layer formed on sidewalls of the floating gate so as to fill the gap. The control plug may include: a first control plug formed between the plurality of fingers and having sidewalls facing inner walls of the fingers; and a second control plug formed outside the floating gate and having sidewalls facing outer walls of the fingers.

Growing community of inventors

Gyeonggi-do, South Korea

Sung-Kun Park