Hynix Semiconductor Inc.

Sung Koo Lee

Jae Chang Jung

Geun Su Lee

Ki Soo Shin

Keun Kyu Kong

Young Sun Hwang

Cheol Kyu Bok

Seung Chan Moon

Ki-Soo Shin

A method for fabricating a semiconductor device, comprising forming a first photoresist pattern having a hole on a first layer, forming a surface curing layer in the hole and curing the first photoresist pattern on an inner sidewall of the hole to form a first curing pattern, removing the surface curing layer, forming a second photoresist pattern in the hole and curing the second photoresist pattern that contacts with the first curing pattern to form a second curing pattern, removing the first and second photoresist patterns, and etching the first layer using the first and second curing patterns as an etch barrier.

Method for fabricating semiconductor device

A method for forming a pattern of a semiconductor device comprises: forming a stacked film including an underlying layer, an antireflection film and a photoresist film over a semiconductor substrate; coating an over-coating composition over the photoresist film to form an over-coating film; performing an exposing and developing process with a cell mask on the photoresist film where the over-coating film is formed to form a photoresist pattern; forming a silicon-containing-RELACS layer over the antireflection film including the photoresist pattern where the over-coating film is formed; removing the over-coating film and the silicon containing RELACS layer on the photoresist pattern to form a spacer of the silicon containing RELACS layer at sidewalls of the photoresist pattern; removing the photoresist pattern; and etching the antireflection film and the underlying layer with the spacer of the silicon containing RELACS layer as a mask to form an antireflection pattern and an underlying pattern.

Method for forming pattern of semiconductor device

Disclosed herein is a method for manufacturing a semiconductor device that includes performing an Oplasma treatment step after forming a Si-containing anti-reflection film.

Method for manufacturing semiconductor device

A polymer for crosslinking an anti-reflective film has a high refractive index. An anti-reflective composition containing the polymer is useful in a damascene process and an immersion lithography process using ArF (193 nm) of a semiconductor device manufacturing process.

Anti-reflective polymer, anti-reflective composition containing the same, and method for forming pattern using the same

A photoresist composition includes a base resin, a copolymer of acrylic acid or methacrylic acid and 3,3-dimethoxypropene, a photoacid generator, an organic base, and an organic solvent, and is used for forming a fine (micro) pattern in a semiconductor device by double patterning. The invention method can markedly reduce the number of steps in etching and hard mask deposition processes, so that work hours and manufacturing costs may be reduced, contributing to an increase in yield of semiconductor devices.

Photoresist composition and method for forming pattern of a semiconductor device

Disclosed herein is a method for manufacturing a semiconductor device that includes performing an Oplasma treatment step after forming a Si-containing photoresist film.

Method for manufacturing underlying pattern of semiconductor device

Cleaning solutions for removing photoresist resins and a method of forming patterns using the same are disclosed. The cleaning solution includes water (HO) as main component, one or more surfactants as additive selected from the group consisting of polyoxyalkylene compounds, a salt of alcohol amine of Formula 1 and hydrocarbon compounds having carboxylic acid (&#x2014;COOH) group, a salt of alcohol amine of Formula 1 and hydrocarbon compounds having sulfonic acid (&#x2014;SOH) group, polyethylene glycol compounds, compounds of Formula 3, compounds having a molecular weight ranging from 1000 to 10000 including repeating unit of Formula 4, polyether denatured silicon compounds and alcohol compounds. wherein R, R, R, R, R, A, l and n are defined in the specification.

Cleaning solution for removing photoresist

Cleaning solutions for photoresist are disclosed which are useful for cleaning a semiconductor substrate in the last step of development when photoresist patterns are formed. Also, methods for forming photoresist patterns using the same are disclosed. The disclosed cleaning solution comprises HO as a solution, a surfactant which is phosphate-alcoholamine salt represented by Formula 1, and an alcohol compound. The disclosed cleaning solution has lower surface tension than that of distilled water which has been used for conventional cleaning solutions, thereby improving resistance to photoresist pattern collapse and stabilizing the photoresist pattern formation. 

Cleaning solution for photoresist and method for forming pattern using the same

A process of forming ultra fine patterns using bottom anti-reflective coating containing acid generator. More particularly, a process of forming vertical patterns using an organic bottom anti-reflective coating containing excessive amount of acid generator, in order to prevent formation of sloping patterns due to photoresist resins absorbing wavelength of light used as light sources during lithography process using light sources such as KrF, ArF, VUV, EUV, E-beam and ion beam, even when photoresist resins having high absorbance to light source are used.

Process for forming an ultra fine pattern using a bottom anti-reflective coating film containing an acid generator

Photoresist polymers and photoresist compositions containing the same are disclosed. A negative photoresist composition containing a photoresist polymer comprising a repeating unit represented by Formula 4 prevents collapse of patterns when photoresist patterns of less than 50 nm are formed. Accordingly, the disclosed negative photoresist composition is very effective for a photolithography process using EUV (Extreme Ultraviolet, 13 nm) light source.

Photoresist polymer and photoresist composition including the same

A method of inhibiting pattern collapse using relacs (resist enhancement lithography assisted by chemical shrink) is disclosed herein. More particularly, the present invention relates to a method of forming photoresist patterns by coating relacs material on an underlying layer before coating photoresist material thereon and then heating the layer to inhibit pattern collapse.

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Seoul, South Korea

Sung Koo Lee