Eugene Technology Co., Ltd.

Samsung Electronics Co., Ltd.

Sung-Kil Cho

Seong Jin Park

Ki-Suk Kim

Yui-yoon Lee

Seung-Woo Shin

Hai-Won Kim

Hai Won Kim

Woo Duck Jung

Wan Suk Oh

Ho Min Choi

Koon-Woo Lee

Woo-Duck Jung

Ho-Min Choi

Wan-Suk Oh

Ki Ho Kim

Koon Woo Lee

Hyuk Lyong Gwon

Kang-Wook Lee

Yui-Yoon Lee

Tae-Hwan Cha

Provided are a substrate supporting unit and a substrate processing apparatus, and a method of manufacturing the substrate supporting unit. The substrate supporting unit includes a susceptor on which a substrate is placed on a top surface thereof, one or more heat absorbing members which are capable of being converted between a mounted position at which the heat absorbing member is disposed on an upper portion of the susceptor to thermally contact the susceptor and a released position at which the heat absorbing member is separated from the upper portion of the susceptor, the one or more heat absorbing members absorbing heat of the susceptor at the mounted position, and an edge ring having a plurality of fixing slots in which the heat absorbing members are selectively inserted and fixed.

Substrate supporting unit and substrate processing apparatus manufacturing method of the substrate supporting unit

Provided is a method for forming a silicon film, and more particularly, to a method for forming a polycrystalline silicon film including pretreatment process in a process for forming a silicon film. According to an embodiment of the present invention, a method for forming a polycrystalline silicon film by annealing a amorphous silicon film deposited on a base, the method includes a pretreatment process of allowing a pretreatment gas including at least one of N, C, O and B to flow.

Method for forming polysilicon film

Provided is a method and apparatus for depositing an amorphous silicon film. The method includes supplying a source gas and an atmospheric gas onto a substrate in a state where the substrate is loaded in a chamber to deposit the amorphous silicon film on the substrate. The atmospheric gas includes at least one of hydrogen and helium. The source gas includes at least one of silane (SiH), disilane (SiH), and dichlorosilane (SiClH).

Method and apparatus for depositing amorphous silicon film

Growing community of inventors

Yongin-si, South Korea

Sung-Kil Cho