Samsung Electronics Co., Ltd.

Sung Keun Park

Gun Goo Lee

Jin Sung Kim

Woon Chun Kim

Ji Hye Shim

In Wook Oh

Jun Heyoung Park

Ho Sam Choi

Chul Hong Park

Byung Sung Kim

Sung Wook Hwang

Ji Eun Woo

Doo Hwan Park

Jun Gul Hwang

A semiconductor package includes a semiconductor chip, and a connection structure disposed on at least one side of the semiconductor chip, and including an insulating layer and a redistribution layer electrically connected to the semiconductor chip, wherein the redistribution layer includes a plurality of conductive patterns, and at least two of the plurality of conductive patterns have different degrees of surface roughness, and a conductive pattern having a higher surface roughness has a width wider than a width of a conductive pattern having a lower surface roughness.

Semiconductor package

A semiconductor device includes a plurality of main contact plugs and a plurality of dummy contact plugs which pass through an insulating layer on a substrate. A plurality of upper interconnections is on the insulating layer. The plurality of dummy contact plugs include a first dummy contact plug. The plurality of upper interconnections include a first upper interconnection overlapping the first dummy contact plug. A vertical central axis of the first dummy contact plug is located outside the first upper interconnection.

Semiconductor device including dummy contact

A semiconductor package includes a connection structure including one or more redistribution layers, a semiconductor chip disposed on the connection structure and electrically connected to the one or more redistribution layers, an encapsulant disposed on the connection structure and covering at least a portion of the semiconductor chip, and a shielding structure covering at least a portion of the encapsulant. The shielding structure includes a conductive pattern layer having a plurality of openings, a first metal layer covering the conductive pattern layer and extending across the plurality of openings, and a second metal layer covering the first metal layer. The second metal layer has a thickness greater than a thickness of the first metal layer.

Semiconductor package and electromagnetic interference shielding structure for the same

A fan-out semiconductor package includes a frame comprising a plurality of wiring layers electrically connected to one another, and having a recessed portion having a stopper layeraM disposed on a bottom surface of the recessed portion, and a through-hole penetrating through the stopper layer; a semiconductor chip having an active surface on which a connection pad is disposed and an inactive surface opposing the active surface, and disposed in the recessed portion such that the inactive surface opposes the stopper layer; an encapsulant covering at least portions of the frame and the inactive surface of the semiconductor chip, and filling at least a portion of the recessed portion; and an interconnect structure disposed on the frame and the active surface of the semiconductor chip, and comprising a redistribution layer electrically connected to the plurality of wiring layers and the connection pad.

Fan-out semiconductor package

A method of generating a layout and manufacturing a semiconductor device, including receiving a design layout of a semiconductor device including active fins; extracting a design rule of the active fins from the design layout; forming fin lines overlapping the active fins such that the fin lines have a length that is greater than a length of the active fins, wherein the fin lines continuously extend from a position adjacent to one edge of a layout region of the semiconductor device toward another edge, and are formed in an entirety of the layout region of the semiconductor device; forming a mandrel pattern layout in an entirety of the layout region of the semiconductor device, using the fin lines; and forming a cut pattern layout in the entirety of the layout region of the semiconductor device, using the active fins.

Method of generating layout and method of manufacturing semiconductor devices using same

Growing community of inventors

Goyang-si, South Korea

Sung Keun Park