Samsung Electro-Mechanics Co., Ltd.

Sung Keun Park

Young Ki Lee

Chang Hyun Lim

Seog Moon Choi

Kwang Soo Kim

Sang Hyun Shin

Jung Eun Kang

Sun Woo Yun

Jin Suk Son

Chang Jae Heo

Joon Seok Chae

Heung Soo Park

Disclosed herein are a hybrid heat-radiating substrate including a metal core layer; an oxide insulating core layer that is formed in a thickness direction of the metal core layer to have a shape where the oxide insulating core layer is integrally formed with the metal core layer, an oxide insulating layer that is formed on one surface or both surfaces of the metal core layer, and a circuit layer that is configured to include first circuit patterns formed on the oxide insulating core layer and second circuit patterns formed on the oxide insulating layer, and a method of manufacturing the same.

Method of manufacturing a hybrid heat-radiating substrate

Disclosed herein is a power module package, including: a first substrate having first semiconductor chips mounted thereon; and a second substrate having second semiconductor chips mounted thereon, the second substrate being coupled with the first substrate such that a side surface in a thickness direction thereof is disposed on an upper surface of the first substrate.

Power module package and system module having the same

Disclosed herein are a power module package and a method for manufacturing the same. The power module package includes: a base substrate made of a metal material; cooling channels formed to allow a cooling material to flow in an inner portion of the base substrate; an anodized layer formed on an outer surface of the base substrate; a metal layer formed on a first surface of the base substrate having the anodized layer and including circuits and connection pads; and semiconductor devices mounted on the metal layer.

Power module package and method for manufacturing the same

Disclosed herein are a heat-dissipating substrate and a fabricating method thereof. The heat-dissipating substrate includes a plating layer divided by a first insulator formed in a division area. A metal plate is formed on an upper surface of the plating layer and filled with a second insulator at a position corresponding to the division area, with an anodized layer formed on a surface of the metal plate. A circuit layer is formed on the anodized layer which is formed on an upper surface of the metal plate. The heat-dissipating substrate and fabricating method thereof achieves thermal isolation by a first insulator formed in a division area and a second insulator.

Heat-dissipating substrate and fabricating method thereof

Disclosed is a package substrate for an optical element, which includes a base substrate, a first circuit layer formed on the base substrate and including a mounting portion, an optical element mounted on the mounting portion, one or more trenches formed into a predetermined pattern around the mounting portion by removing portions of the first circuit layer so that the first circuit layer and the optical element are electrically connected to each other, and a fluorescent resin material applied on an area defined by the trenches so as to cover the optical element, and in which such trenches are formed on the first circuit layer so that the optical element and the first circuit layer are electrically connected to each other, thus maintaining the shape of the fluorescent resin material and obviating the need to form a via under the optical element. A method of manufacturing the package substrate for an optical element is also provided.

Method of manufacturing package substrate for optical element

Disclosed herein is a semiconductor package, including: a substrate having a first surface and a second surface; at least one semiconductor device formed on the first surface of the substrate; first lead frames respectively formed at both sides of the first surface of the substrate; and second lead frames respectively formed at both sides of the second surface of the substrate, wherein the first lead frame and the second lead frame are spaced apart from each other by an isolation distance base.

Semiconductor package having lead frames

Disclosed herein are a power module package and a method for manufacturing the same. The power module package includes: a base substrate having grooves formed between a plurality of semiconductor device mounting areas; semiconductor devices mounted on the semiconductor device mounting areas of the base substrate; and a molding formed on the base substrate and in inner portions of the grooves.

Disclosed herein are a heat-radiating substrate and a method of manufacturing the same. The heat-radiating substrate includes: a core layer including a core metal layer and a core insulating layer formed on the core metal layer and divided into a first region and a second region; a circuit layer formed in the first region of the core layer; a build-up layer formed in the second region of the core layer and including a build-up insulating layer and a build-up circuit layer; an adhesive layer formed between the second region of the core layer and the build-up layer; and an impregnation device mounted on the build-up layer to be impregnated into the adhesive layer. A heat generating element is mounted on the circuit layer and a thermally weakened element is mounted on the build-up layer, thereby preventing the thermally weakened element from being damaged by heat of the heat generating element. The impregnation device is formed on the build-up layer and is impregnated into the adhesive layer, thereby efficiently utilizing a space.

Growing community of inventors

Gyunggi-do, South Korea

Sung Keun Park