Egtm Co., Ltd.

Skhynix Inc.

Sung Jun Ji

Sun Young Baik

Tae Young Lee

Shin Beom Kim

Sang Hyun Lee

Dong Kyun Lee

Tae Hwan Lim

Su Pill Chun

Jang Keun Sim

The present specification provides an organic group 4 metal precursor compound and a method for forming a thin film using the same.

Organometallic precursor compound

According to the embodiment of the present disclosure, an organo tin compound is represented by the following Chemical Formula 1:

Organo tin compound for thin film deposition and method for forming tin-containing thin film using same

According to an embodiment of the present disclosure, a niobium precursor compound is represented by Chemical Formula 1 or Chemical Formula 2 below: Therefore, the niobium precursor compound according to an embodiment of the present disclosure has excellent thermal stability, exists in a liquid state at room temperature, and has high volatility, thereby having an advantage which is advantageous for application to a thin film forming process. Further, the niobium thin film formed using the niobium precursor compound according to an embodiment of the present disclosure has a small residual content and has uniform physical properties.

Niobium precursor compound for thin film deposition and method for forming niobium-containing thin film using same

A group 5 metal compound according to an embodiment of the present disclosure is represented by any one of the following &#x3c;Chemical Formula 1&#x3e; and &#x3c;Chemical Formula 2&#x3e;:  In &#x3c;Chemical Formula 1&#x3e; and &#x3c;Chemical Formula 2&#x3e;,

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Suwon-Si, South Korea

Sung Jun Ji