Enf Technology Co., Ltd.

Sung Jun Hong

Myung Ho Lee

Jin Sung Kim

Myung Geun Song

Hyeon Woo Park

Hoon Sik Kim

Jae Jung Ko

Myong Euy Lee

Jun Hyeok Hwang

Hyo Jung Nam

Eun Mi Kim

Dong Hyun Chun

Ho Tae Lee

Provided are a silicon nitride film etching composition, a method of etching a silicon nitride film using the same, and a manufacturing method of a semiconductor device. Specifically, a silicon nitride film may be highly selectively etched as compared with a silicon oxide film, and when the composition is applied to an etching process at a high temperature and a semiconductor manufacturing process, not only no precipitate occurs but also anomalous growth in which the thickness of the silicon oxide film is rather increased does not occur, thereby minimizing defects and reliability reduction.

Silicon nitride film etching composition and etching method using the same

Provided are a silicon nitride film etching composition, a method of etching a silicon nitride film using the same, and a manufacturing method of a semiconductor device. Specifically, a silicon nitride film may be stably etched with a high selection ratio relative to a silicon oxide film, and when the composition is applied to an etching process at a high temperature and a semiconductor manufacturing process, not only no precipitate occurs but also anomalous growth in which the thickness of the silicon oxide film is rather increased does not occur, thereby minimizing defects and reliability reduction.

Growing community of inventors

Yongin-si, South Korea

Sung Jun Hong