Spansion Llc.

Sung Jin Kim

Alexander H Nickel

Hieu T Pham

Minh-Van Ngo

Minh Quoc Tran

Masato Tsuboi

Shinich Imada

Minh Van Ngo

Lu You

Simon S Chan

William S Brennan

Ning Cheng

Pei-Yuan Gao

Allen Lewis Evans

Erik Wilson

An ultraviolet light absorbent silicon oxynitride layer overlies a memory cell including a pair of source/drains, a gate insulator, a floating gate, a dielectric layer, and a control gate. A conductor is disposed through the silicon oxynitride layer for electrical connection to the control gate, and another conductor is disposed through the silicon oxynitride layer for electrical connection to a source/drain.

High ultraviolet light absorbance silicon oxynitride film for improved flash memory device performance

Prior to deposition of a silicon nitride (SiN) layer on a structure, a non-plasma enhanced operation is undertaken wherein the structure is exposed to silane (SiH) flow, reducing the overall exposure of the structure to hydrogen radicals. This results in the silicon nitride being strongly bonded to the structure and in improved performance.

[object Object]

A method for forming a single damascene and/or dual damascene, contact and interconnect structure, comprising: performing front end processing, depositing copper including a copper barrier, annealing the copper in at least 90% Nwith less than 10% H, performing planarization, performing in-situ low-H NHplasma treatment and low Si&#x2014;H SiN etch stop layer deposition, and performing remaining back end processing.

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Palo Alto, CA, United States of America

Sung Jin Kim