Samsung Electronics Co., Ltd.

Seah Networks Co., Ltd.

Sung-Jin Kang

Sang-Hoon Ahn

Hyeok-Sang Oh

Hoon-Seok Seo

Young-Bae Kim

Woo-Jin Lee

Su-Hyun Bark

Eui-Bok Lee

Jong-Min Baek

Deok-Young Jung

Woo-Kyung You

Vietha Nguyen

Sang-Shin Jang

Kang-min Lee

An integrated circuit device includes a metal film and a complex capping layer covering a top surface of the metal film. The metal film includes a first metal, and penetrates at least a portion of an insulating film formed over a substrate. The complex capping layer includes a conductive alloy capping layer covering the top surface of the metal film, and an insulating capping layer covering a top surface of the conductive alloy capping layer and a top surface of the insulating film. The conductive alloy capping layer includes a semiconductor element and a second metal different from the first metal. The insulating capping layer includes a third metal.

Integrated circuit device and method of manufacturing the same

Provided herein is a method of forming micropatterns, including: forming an etching target film on a substrate; forming a photosensitivity assisting layer on the etching target film, the photosensitivity assisting layer being terminated with a hydrophilic group; forming an adhesive layer on the photosensitivity assisting layer, the adhesive layer forming a covalent bond with the hydrophilic group; forming a hydrophobic photoresist film on the adhesive layer; and patterning the photoresist film.

Methods of forming micropatterns and substrate processing apparatus

An integrated circuit (IC) device includes a lower wiring structure including a lower metal film. The lower wiring structure penetrates at least a portion of a first insulating film disposed over a substrate. The IC device further includes a capping layer covering a top surface of the lower metal film, a second insulating film covering the capping layer, an upper wiring structure penetrating the second insulating film and the capping layer, and electrically connected to the lower metal film, and an air gap disposed between the lower metal film and the second insulating film. The air gap has a width defined by a distance between the capping layer and the upper wiring structure.

Disclosed is a method and an apparatus for decoding transmission signal. The method includes the steps of: receiving transmission signal including repeated symbols; deinterleaving the received signal; mutually combining the repeated symbols in the deinterleaved signal; and decoding the combined symbols. According to the method, reception performance is improved as compared to a conventional decoding method, and system performance is improved by reducing the loss of frame information included in an FCH.

Method and apparatus for decoding transmission signals in a wireless communication system

Growing community of inventors

Seoul, South Korea

Sung-Jin Kang