Lg Electronics Inc.

Lg Innotek Co., Ltd.

Kec Corporation

Sung Jin An

Hyun Kyong Cho

Jong Wook Kim

Jin Kyoung Yoo

Gyu Chul Yi

Young Joon Hong

Kyu Hyo Hwang

Jong Hong Lee

Gab Soo Choi

Jin Sang Park

Cha Soo Jeon

Yong Min Park

Sang Bo Bae

A light emitting device is disclosed. The light emitting device includes a conductive support layer; a reflective layer disposed on the conductive support layer; a nitride semiconductor layer disposed on the reflective layer. Furthermore, the nitride semiconductor layer includes a second-type semiconductor layer on the reflective layer, an active layer on the second-type semiconductor layer, and a first-type semiconductor layer on the active layer; a light extraction structure disposed on the first-type semiconductor layer; and a first-type electrode disposed on the light extraction structure.

Light emitting device and method of manufacturing the same

Provided are a semiconductor device and a bonding structure thereof, in which an inter-metal compound is not formed with a semiconductor die or a lead frame, thereby improving electrical and mechanical properties and wettability and suppressing conglomeration of a die bonding material. The semiconductor device includes a semiconductor die, a barrier layer formed on a surface of the semiconductor die, a first metal layer formed on the barrier layer, a central metal layer formed on the first metal layer, and a second metal layer formed on the central metal layer. Here, the first and second metal layers have a first melting temperature, and the central metal layer has a second melting temperature lower than the first melting temperature.

Semiconductor device and die bonding structure thereof

A light emitting device and a method of manufacturing the same are disclosed. The light emitting device includes a buffer layer formed on a substrate, a nitride semiconductor layer including a first semiconductor layer, an active layer, and a second semiconductor layer, which are sequentially stacked on the buffer layer, a portion of the first semiconductor layer being exposed to the outside by performing mesa etching from the second semiconductor layer to the portion of the first semiconductor layer, and at least one nanocone formed on the second semiconductor layer.

Growing community of inventors

Gyeongsangbuk-do, South Korea

Sung Jin An