Samsung Electronics Co., Ltd.

Sung-In Kim

Hong-Shik Kim

Jaewon Jang

Dae-Won Kim

Jae-kyu Lee

Yong-Jun Kim

Madhan Raj Kanagarathinam

Ki-seok Suh

Jae-Rok Kahng

Harikrishnan Natarajan

Sandesh Kumar Srivastava

Jung-Woo Song

Suneel Kumar Parmeshwar Diggi

Siva Naga Kumar Venkata Atmakuri

Hakgyu Kim

The present invention generally relates to a method for traffic control, and an electronic device therefor. An operation method of an electronic device may comprise the steps of: measuring the temperature of the electronic device through at least one sensor; checking an operation state of at least one application being executed in the electronic device; and controlling data throughput for each of the at least one application on the basis of the operation state of the at least one application if the measured temperature is equal to or greater than a reference value. Other various embodiments are possible.

Traffic control method and electronic device thereof

A method and system for handling a wireless communication in a Voice over Wireless Fidelity (VoWiFi) system including a plurality of nodes is provided. The method includes detecting, by a VoWiFi controller, a wireless connection between an electronic device and a first node from among the plurality of nodes; determining, by the VoWiFi controller, a performance of each of the plurality of nodes; detecting, by the VoWiFi controller, that a first performance of the first node is less than a second performance of a second node from among the plurality of nodes; and performing, by the VoWiFi controller, a handover of the electronic device from the first node to the second node.

Method and system for handling wireless communication in voice over wireless fidelity system

A magnetoresistive random access memory (MRAM) device including a substrate including a plurality of active patterns arranged along a first direction, each of the active patterns extending in a diagonal direction with respect to the first direction; a plurality of gate structures on the substrate, the gate structures extending in a second direction substantially perpendicular to the first direction; a source line structure electrically connected to source regions of the respective active patterns, the source line structure extending in the first direction; a plurality of magnetic tunnel junction (MTJ) structures electrically connected to drain regions of the respective active patterns, the MTJ structures being spaced apart from each other; and a bit line structure electrically connected to the MTJ structures in respective memory cells, the memory cells sharing with the source line structure.

Magnetoresistive random access memory device and method of manufacturing the same

Semiconductor devices are provided including a substrate defining a gate trench. A buried gate structure is provided in the gate trench and at least fills the gate trench. The buried gate structure includes a gate insulation layer pattern, a gate electrode and a capping layer pattern. First and second impurity regions are provided at portions of the substrate adjacent to the buried gate structure, respectively. At least a portion of each of the first and second impurity regions face a sidewall of the buried gate structure. First and second buried contact structures are provided on the first and second impurity regions, respectively. Each of the first and second buried contact structures includes a metal silicide pattern and a metal pattern, and at least a portion of each of the first and second buried contact structures face to a sidewall of the buried gate structure.

Semiconductor devices having buried contact structures

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Seoul, South Korea

Sung-In Kim