Samsung Electronics Co., Ltd.

Sung-In Hong

Sung-Hwan Kim

Yong-Chul Oh

Young-Jun Choi

Hoon Jeong

Yong-lack Choi

Ho-Ju Song

A memory device includes an insulation layer, an active pattern, a gate insulation layer and a gate electrode. The insulation layer is formed on a substrate. The active pattern is formed on the insulation layer, and includes two protrusions and a recess between the protrusions. The active pattern includes a first impurity region and a second impurity region at upper portions of the protrusions distal from the substrate, respectively, and a base region at the other portions serving as a floating body for storing data. The gate insulation layer is formed on a surface of the active pattern. The gate electrode is formed on the gate insulation layer, and surrounds a lower portion of the active pattern and partially fills the recess.

Bipolar transistor for a memory array

Disclosed is a method for programming flash memories, each of which has a memory cell array divided into plural blocks. Each of the blocks is associated with block status information indicating whether it is valid. According to the programming method of the present invention, first, a parallel-programming process is performed for valid blocks of all of the flash memories. Then, a serial-programming process is performed for flash memories having invalid blocks. This enables the time required for programming flash memories with one or more invalid blocks to be reduced.

Method for simultaneously programming plural flash memories having invalid blocks

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Seoul, South Korea

Sung-In Hong