Samsung Electronics Co., Ltd.

Amorepacific Corporation

Sung Il Park

Youn Joon Kim

Yun Il Lee

Dae Won Ha

Sang Hoon Han

Hyung Suk Lee

Jae Hyun Park

Eun Sil Park

Joong Gun Oh

Jae Hoon Lim

Jin Young Lee

Duck Hee Kim

Jun Seong Park

Hye Yoon Park

Eun Joo Kim

Ih Seop Chang

Hyeon Chung Kim

Min Gyu Kim

Dong Hun Lee

Yong Jin Kim

Sun Young Kim

Do Hoon Kim

Do Y Choi

Ji Sick Hwang

Jin Ho Nam

Jung Gun You

Byung Young Kang

Jae Won Yoo

Hong-Ju Shin

Soon Ae An

Dae Jin Hong

Dong Hyuk Jang

Yu Jung Kim

Chang-Geun Yi

Yoshinao Harada

Bong Soo Pi

Ji Sik Shin

Yong Kyung Kim

Jin Young Song

Kuan Chi Hsu

Hyun Soo Jo

Young Moon Choi

Jin Ha Hwang

Suil Kim

Hyun Hee Kim

A semiconductor device comprises a substrate, a first active pattern on the substrate and extending in a first direction, a second active pattern extending in the first direction spaced apart from the substrate, a gate electrode extending in a second direction surrounding the first and second active patterns, and a high dielectric film between the first and second active patterns and the gate electrode. The gate electrode includes first and second work function adjusting films surrounding the high dielectric film on the first and second active patterns, and a filling conductive film surrounding the first and second work function adjusting films. The first and second work function adjusting films include first and second work function conductive films, each of which includes a first metal film. A thickness of the first metal film of the first work function conductive film is greater than that of the second work function conductive film.

Semiconductor device and method for manufacturing the same

A semiconductor device having high performance and a high degree of integration includes a substrate, a first transistor disposed on the substrate, the first transistor comprising a first active pattern including a first two-dimensional semiconductor material, a first gate electrode through which the first active pattern penetrates, and a first source/drain contact connected to the first active pattern on a side surface of the first gate electrode, a second transistor disposed on an upper surface of the first transistor, the second transistor comprising a second active pattern including a second two-dimensional semiconductor material, a second gate electrode through which the second active pattern penetrates, and a second source/drain contact connected to the second active pattern on a side surface of the second gate electrode, and a first wiring structure interposed between the first transistor and the second transistor, and electrically connecting the first transistor and the second transistor.

Semiconductor device and method for fabricating the same

A semiconductor device includes: a first active pattern extending in a first direction; a second active pattern spaced apart extending in the first direction, the first active pattern being provided between the second active pattern and a substrate; a gate structure extending in a second direction, the first active pattern and the second active pattern passing through the gate structure, and the second direction crossing the first direction; a first source/drain area connected with the first active pattern and provided on a side of the gate structure; a second source/drain area connected with the second active pattern and provided on the first source/drain area; a first insulating structure provided between the substrate and the first source/drain area, the first insulating structure not being provided between the substrate and the gate structure; and a second insulating structure provided between the first source/drain area and the second source/drain area.

A semiconductor memory device and a method for manufacturing the same. The semiconductor memory device may include a substrate, a first lower wire pattern and a first upper wire pattern stacked on the substrate, and spaced apart from each other; a second lower wire pattern and a second upper wire pattern stacked on the substrate, spaced apart from each other, and spaced apart from the first lower and upper wire patterns; a first gate line surrounding the first lower wire pattern and the first upper wire pattern; a second gate line surrounding the second lower wire pattern and the second upper wire pattern and spaced apart from the first gate line; a first lower source/drain area; a first upper source/drain area; and a first overlapping contact that electrically connects the first lower source/drain area, the first upper source/drain area and the second gate line to each other.

Semiconductor memory devices and methods for manufacturing the same

A semiconductor device includes a fin type pattern extending in a first direction on a substrate, a first gate electrode extending in a second direction intersecting the first direction on the fin type pattern, a source/drain region on a side wall of the first gate electrode and in the fin type pattern, a separation structure extending in the first direction on the substrate, the separation structure including a first trench and being spaced apart from the fin type pattern and separating the first gate electrode, an interlayer insulating layer on a side wall of the separation structure and covering the source/drain region, the interlayer insulating layer including a second trench having a lower surface lower than a lower surface of the first trench, and a contact connected to the source/drain region and filling the first trench and the second trench.

Semiconductor device

Method for fabricating semiconductor device

The present specification relates to a composition for external application to skin with improved solubility and feeling during use, comprising a benzoic acid amide compound, an isomer thereof, a pharmaceutically acceptable salt thereof, a hydrate thereof or a solute that is a solvate thereof, and a first cyclodextrin solubilizing agent.

Composition comprising benzoic acid amide compound and cyclodextrin solubilizing agent

The present disclosure relates to an external-use skin preparation composition containing a natural ceramide, a ceramide derivative, and aextract, and more specifically, the present disclosure relates to an external-use skin preparation composition containing these ingredients, thereby being effective for enhancing skin moisturizing ability, reducing skin wrinkles, and enhancing elasticity. In addition, the present disclosure relates to use of the composition, and a method for improving skin moisturization, reducing skin wrinkles, and/or improving skin elasticity by using the composition.

Composition for external application containing a ceramide, a derivative thereof and an extract of

The present invention relates to a cosmetic composition using a mannosylerythritol lipid, which is a kind of glycolipid, as a stabilizer in order to prevent kojyl methylenedioxycinnamate, which is an active ingredient having various skin effects such as antiaging, whitening and antioxidation, from causing crystallization inside a dosage form. Even if the cosmetic composition according to the present invention contains a high concentration of an active ingredient, crystal precipitation does not occur in various dosage forms, and thus the functionality of the active ingredient is maximized, skin delivery is increased and the texture during use is improved.

Cosmetic composition having high dosage form stability

A semiconductor device includes a substrate; a vertical channel structure including a pair of active fins extended in a first direction, perpendicular to an upper surface of the substrate, and an insulating portion interposed between the pair of active fins; an upper source/drain disposed on the vertical channel structure; a lower source/drain disposed below the vertical channel structure and on the substrate; a gate electrode disposed between the upper source/drain and the lower source/drain and surrounding the vertical channel structure; and a gate dielectric layer disposed between the gate electrode and the vertical channel structure. An interval between the gate electrode and the upper source/drain may be smaller than an interval between the gate electrode and the lower source/drain in the first direction.

Semiconductor device having vertical channel and method of manufacturing the same

The present invention relates to a cosmetic composition for skin whitening and anti-aging, which contains 2 or more of collagen peptides, snake needle grass extract, and white ginseng saccharides as effective ingredients, improves skin resilience by increasing the content of collagen in the skin and suppresses the growth of melanin cells, improves skin brightness and uniformity, and alleviates skin yellowness and redness, so as to provide the effect of making the skin appear clearer and more radiant.

Cosmetic composition for whitening and improving the resilience of skin

Provided are a polymer/liposome nanocomposite composition comprising lipids and poly(amino acids), and a method for preparing same. The polymer/liposome nanocomposite composition has excellent formation stability with respect to surfactants and salts, and can be used in various ways as a drug delivery system in the fields of medicine and cosmetics.

Polymer-liposome nanocomposite composition for percutaneous absorption, and method for preparing same

A food container allowing the inner space of the food container to be appropriately divided with a minimum number of components and a refrigerator having the same. The food container includes a case defining an accommodation space therein, an inner surface of the case being provided with a stepped portion, a divider assembly to partition the accommodation space as desired, the divider assembly having one side slidably seated on the stepped portion.

Food container and refrigerator having the same

The present invention relates to an oil-in-water (O/W) type nano-emulsion composition comprising an oil component containing oil and a polyethylene glycol ester-based emulsifier; and a water component containing a polyol or a polyol derivative. The present invention also relates to a cosmetic composition comprising the oil-in-water type nano-emulsion composition, and to a method for preparing the oil-in-water type nano-emulsion composition. According to the present invention, a nano-sized low-viscosity emulsion having a high inner phase can be obtained through the method that is different from the conventional methods of phase inversion temperature emulsification or high pressure emulsification, thereby significantly improving the stability of the emulsion. In addition, the nano-emulsion composition of the present invention can be added to a variety of cosmetic compositions having a variety of methods of use and can thus deliver active ingredients to the skin effectively since it has small-sized particles.

Oil-in-water type nano-emulsion composition and method for preparing same

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Seoul, South Korea

Sung Il Park